Voltage bias condition

FIGURE 5.22 (See color insert) Programming operation of a NAND-flash memory-cell, where the programming cell is No. 5 (a) voltage bias conditions for memory cells and (b) parasitic capacitances during No. 5 cell programming. 

Recently, Raja et al. [132] proposed a method to calculate efficiency. In this method, the power output by the three-electrode photoelectrochemical cell is calculated by considering the voltage increase between the anode and cathode due to light illumination under external bias conditions. 

Figure 2.12 Temperature dependence of the drain current-voltage characteristics in 0.5% Oj in Ar under two substrate bias conditions. (From [97]. 2004 Material Science Forum. Reprinted with permission.)...

Figure I. (a) Schematic diagram of a metal/insulator/metal tunnel junction with a variable applied d.c. bias voltage, (b) Partial schematic energy band diagram under zero applied bias conditions, where j and s are the mean barrier height and thickness respectively, (c) Corresponding energy-band diagram where applied dx. bias V is sufficient to excite a vibrational mode in the barrier thus producing an inelastic tunneling current.

The TACAN Corporation has evaluated the stability of drive voltage and bias voltage under conditions of extended operation and for irradiation with light of different wavelengths and optical power levels [306, 307]. The performance of polymer modulators was reasonably good and systematically improved as lattice hardness increased (see Figs. 6,20 and 34). We have observed comparable stability. 

FIGURE 9.12. Current-voltage and brightness-voltage characteristics of a color-variable light-emitting device under forward and reverse bias conditions. The inset shows the colors of the device under forward and reverse biases in the CIE chromaticity diagram. 

Fig. 44. Occupation of discrete level gap states under ambient conditions and during filling pulse voltage for two bulk levels (solid curves) as well as an interface-localized level (dashed curve) that exists within the first 500 A of the material. The DLTS signal is proportional to the difference in state occupation between the voltage pulse and ambient bias condition and varies with pulse amplitude as shown at the right for each of the three levels indicated.

However, a plot of hydrogen sensitivity (defined as the drain current change over the initial drain current) versus bias voltage shows different characteristics for forward and reverse bias polarity conditions at 500 ppm of H2, as shown in Fig. 5.11. For the forward bias condition, there is a maximum sensitivity obtained around 1 V and further increase of bias voltage reduces the sensitivity. 

The sensitivity for the reverse bias condition is quite different and increases proportionally to the bias voltage. We have proposed the following mechanism for the change in sensitivity under forward and reverse bias conditions ... 

FIGURE 7.7 Source-drain current as a function of drain-source voltage for several gate-source bias conditions. The contact metals used were silver (a) and gold (b). The inset shows the transfer characteristics used to extract the effective threshold voltage. 

Figure 7. EL spectra of the ITO/PPyVPV PhPA/SPAN/Al device under forward and reverse bias conditions. Under forward bias, the EL spectrum is voltage independent. Under reverse bias, the EL spectrum blue shifts as the voltage increases.

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