External bias

Figure C2.16.7. A schematic energy band diagram of a p-n junction witliout external bias (a) and under forward bias (b). Electrons and holes are indicated witli - and + signs, respectively. It should be remembered tliat tlie energy of electrons increases by moving up, holes by moving down. Electrons injected into tlie p side of tlie junction become minority carriers. Approximate positions of donor and acceptor levels and tlie Feniii level, are indicated.

Hg Cd Te is an example of a ternary detector, in which the value of x controls the cutoff wavelength. Photoconductive detectors are generally simpler to couple to low noise amplifiers photodiodes generally have lower power consumption because these have no external bias, and better high frequency performance (15,16). 

Fig. 2. Representation of the band edges in a semiconductor p—n junction where shallow donor, acceptor energies, and the Fermi level are labeled Ejy E, and E respectively, (a) Without external bias is the built-in potential of the p—n junction (b) under an appHed forward voltage F. ...

Another way to measure the Vhi is by means of photovoltaic measurements [97, 113. The technique is based on the fact that, at near zero applied bias, the OLED acts as a photovoltaic cell, where photogencraled carriers drift under the influence of Vhi to produce a current in an external cireuit. In a way similar to electroabsorption, an external bias is applied in order to compensate the built-in potential and null the net pholocurrent (Fig. 13-6). However, it has been shown that the measurement produces accurate results only at low temperatures, where diffusive transport of charges that are phoiogcneraled at the interlaces is negligible [97]. 

The most intriguing aspect of the self-spreading lipid bilayer is that any molecule in the bilayer can be transported without any external bias. The unique characteristic of the spreading layer offers the chance to manipulate molecules without applying any external biases. This concept leads to a completely non-biased molecular manipulation system in a microfluidic device. For this purpose, the use of nano-space, which occasionally offers the possibility of controlling molecular diffusion dynamics, would be a promising approach. 

It is difficult to isolate the effect of ion bombardment on material properties. An external bias can be applied to the discharge in an attempt to study the ef-... 

The dissolution of PS during PS formation may occur in the dark or under illumination. Both are essentially corrosion processes, by which the silicon in the PS is oxidized and dissolved with simultaneous reduction of the oxidizing species in the solution. The material in the PS, which is distant from the growing front is little affected by the external bias due to the high resistivity of PS and is essentially at the open circuit potential (OCP). Such corrosion process is responsible for the formation of micro PS of certain thickness (stain film) in HF solutions containing oxidants under an unbiased condition. 

Semiconductor structures that develop space charge layers and contact potentials, like films of proper thickness, films with applied external bias, homo- and hetero-(nano)junctions, permit significant suppression of bulk recombination processes and, potentially, allow high quantum yields. Spatial separation of electron and holes also allows the separation of cathodic and anodic processes in a photoelec-trochemical cell (eventually at the micro and nano level), minimizing surface re-... 

The difference between a photoconductive detector and a photodiode detector lies in the presence of a thin p-doped layer at the surface of the detector element, above the bulk n-type semiconductor. Holes accumulate in the p-layer, and electrons in the n-type bulk, so between the two there is a region with a reduced number density of carriers, known as the depletion layer. The important effect of this is that electron-hole pairs, generated by photon absorption within this depletion layer, are subjected to an internal electric field (without the application of an external bias voltage) and are automatically swept to the p and n regions, and... 

The equilibrium linear susceptibility is, in the absence of an external bias field, given by... 

Spontaneous water-splitting upon illumination needs semiconductors with appropriate electron affinity and flat band conditions. The flat band positions shift with electrolyte pH. Hence, an external bias needs to be applied between the electrodes in most cases to effect water splitting. The external bias can be either electrical or chemical. This external bias contribution should be subtracted from (3.6.11) or (3.6.12) to get the overall photoconversion efficiency. In the case of an external electrical bias, the efficiency can be defined as ... 

Recently, Raja et al. [132] proposed a method to calculate efficiency. In this method, the power output by the three-electrode photoelectrochemical cell is calculated by considering the voltage increase between the anode and cathode due to light illumination under external bias conditions. 

The overall reaction of the photoelectrochemical cell (PEC), H2O + hv H2 -I- I/2O2, takes place when the energy of the photon absorbed by the photoanode is equal to or larger than the threshold energy of 1.23 eV. At standard conditions water can be reversibly electrolyzed at a potential of 1.23 V, but sustained electrolysis generally requires -1.5 V to overcome the impedance of the PEC. Ideally, a photoelectrochemical cell should operate with no external bias so as to maximize efficiency and ease of construction. When an n-type photoanode is placed in the electrolyte charge distribution occurs, in both the semiconductor and at the semiconductor-... 

Inhibition of H2 formation can be seen when the anode-volume is saturated with O2 application of an external bias up to 0.7 V can usually prevent this effect, increased yield of H2 when Pt is present as a cathode has been rationalized in terms of three factors (a) the removal of conduction band electron from Ti02 to Pt [equation (4.4.14)], (b) The ease of reactions (4.4.15) and (4.4.16) because of a low overpotential for H2 evolution from water at the Pt cathode, and (c) H atom migration to the Pt cathode. 

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