Vaporization sputter

Engineering of Chemical vapor Chemical vapor Sputtering Modified Plating... 

Figure 1. Schematic illustration of the laser-vaporization supersonic cluster source. Just before the peak of an intense He pulse from the nozzle (at left), a weakly focused laser pulse strikes from the rotating metal rod. The hot metal vapor sputtered from the surface is swept down the condensation channel in dense He, where cluster formation occurs through nucleation. The gas pulse expands into vacuum, with a skinned portion to serve as a collimated cluster bean. The deflection magnet is used to measure magnetic properties, while the final chaiber at right is for measurement of the cluster distribution by laser photoionization time-of-flight mass spectroscopy.

R. Kelly and R.W. Dreyfus, On the effect of Knudsen-layer formation on studies of vaporization, sputtering, and desorption. Surf. Sci. 1988, 198, 263-276. 

Fig. 1.43 Optogalvanic spectrum (a) of a neon discharge (1 mA, p = 1 mbar) generated with a broadband cw dye laser [117] (b) of Al, Cu, and Fe vapor sputtered in a hollow cathode illuminated with a pulsed dye laser [120]...

This portion of the study was focused on examining the surfaces of the polymer films. Pictures were taken on a JEOL JSM-35C SEM at 15 kV. In order to increase the conductivity and improve the contrast of the materials, the samples were mounted on double-sided carbon tape, coated with osmium tetra oxide (OSO4) vapor, sputter coated with gold palladium (AuPd), and grounded with silver colloidal paste. 

The film material being deposited in the ion plating process can come from any source of condensable atomistic material including thermal vaporization, sputtering, arc vaporization, and chemical vapor precursors. Thermal vaporization is generally used when high deposition rates are desired, while sputter deposition and arc vaporization are used when a lower deposition rate is acceptable. Thermal vaporization and sputter deposition can be combined in the same system. For example, sputter deposition can be used to co-deposit the minor constituent of an alloy while thermal vaporization is used to co-deposit the major constituent. 

The source of depositing material can be from thermal vaporization, sputtering, arc vaporization, or chemical vapor precursor gases. 

Post-vaporization ionization (PVD technology) The ionization of the vaporized (sputtered or evaporated) film atoms to form film ions that can be accelerated in an electric field. See also Film ions. 

The fonnation of clusters in the gas phase involves condensation of the vapour of the constituents, with the exception of the electrospray source [6], where ion-solvent clusters are produced directly from a liquid solution. For rare gas or molecular clusters, supersonic beams are used to initiate cluster fonnation. For nonvolatile materials, the vapours can be produced in one of several ways including laser vaporization, thennal evaporation and sputtering. 

Si02, BaTiO capacitors sol—gel, sputtering, chemical vapor deposition (CVD)... 

Ion implantation (qv) has a large (10 K/s) effective quench rate (64). This surface treatment technique allows a wide variety of atomic species to be introduced into the surface. Sputtering and evaporation methods are other very slow approaches to making amorphous films, atom by atom. The processes involve deposition of a vapor onto a cold substrate. The buildup rate (20 p.m/h) is also sensitive to deposition conditions, including the presence of impurity atoms which can faciUtate the formation of an amorphous stmcture. An approach used for metal—metalloid amorphous alloys is chemical deposition and electro deposition. 

Metallization layers are generally deposited either by CVD or by physical vapor deposition methods such as evaporation (qv) or sputtering. In recent years sputter deposition has become the predominant technique for aluminum metallization. Energetic ions are used to bombard a target such as soHd aluminum to release atoms that subsequentiy condense on the desired substrate surface. The quaUty of the deposited layers depends on the cleanliness and efficiency of the vacuum systems used in the process. The mass deposited per unit area can be calculated using the cosine law of deposition ... 

Use of glow-discharge and the related, but geometrically distinct, hoUow-cathode sources involves plasma-induced sputtering and excitation (93). Such sources are commonly employed as sources of resonance-line emission in atomic absorption spectroscopy. The analyte is vaporized in a flame at 2000—3400 K. Absorption of the plasma source light in the flame indicates the presence and amount of specific elements (86). 

Physical Vapor Deposition Processes. The three physical vapor deposition (PVD) processes are evaporation, ion plating, and sputtering... 

Characteristic Evaporation Ion plating Sputtering Chemical vapor deposition Electro- dep 0 sitio n Thermal spraying... 

Dielectric Deposition Systems. The most common techniques used for dielectric deposition include chemical vapor deposition (CVD), sputtering, and spin-on films. In a CVD system thermal or plasma energy is used to decompose source molecules on the semiconductor surface (189). In plasma-enhanced CVD (PECVD), typical source gases include silane, SiH, and nitrous oxide, N2O, for deposition of siUcon nitride. The most common CVD films used are siUcon dioxide, siUcon nitride, and siUcon oxynitrides. 

At aU but the lowest bombarding energies, the flux of atoms that are sputtered from the surface leaves the surface with a cosine distribution (Fig. 6). The sputtered atoms have kinetic energies higher than those of thermally vaporized atoms, as well as a high energy tail in the energy distribution that can be several tens of eV. 

In the sputtering process, each surface atomic layer is removed consecutively. If there is no diffusion in the target, the composition of the vapor flux leaving the surface is the same as the composition of the bulk of the material being sputtered, even though the composition of the surface may be different from the bulk. This allows the sputter deposition of alloy compositions, which can not be thermally vaporized as the alloy because of the greatly differing vapor pressures of the alloy constituents. 

The simple d-c diode sputtering configuration has the advantage that (/) large areas can be sputtered rather uniformly over long periods of time (2) the target can be made conformal with the substrate (J) the target-to-substrate distance can be made smaU compared to thermal vaporization and (4) the... 

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