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Vaporization source

Vacuum Deposition. Vacuum deposition, sometimes called vacuum evaporation, is a PVD process in which the material is thermally vaporized from a source and reaches the substrate without coUision with gas molecules in the space between the source and substrate (1 3). The trajectory of the vaporized material is therefore line-of-sight. Typically, vacuum deposition takes place in the pressure range of 10 10 Pa (10 10 torr), depending on the level of contamination that can be tolerated in the resulting deposited film. Figure 3 depicts a simple vacuum deposition chamber using a resistively heated filament vaporization source. [Pg.514]

Fig. 5. Thermal vaporization sources (a) hairpin (b) spiral (c) basket (d) boat and (e) canoe, which ate all resistively heated sources and (f) focused... Fig. 5. Thermal vaporization sources (a) hairpin (b) spiral (c) basket (d) boat and (e) canoe, which ate all resistively heated sources and (f) focused...
Most elements thermally vaporize as atoms but some, such as Sb, C, and Se, have a portion of their vapor as clusters of atoms. For these materials, special vaporization sources, called baffle sources, can be used to ensure that the depositing vapor is in the form of atoms by causing the material to be vaporized from multiple hot surfaces before it leaves the source. [Pg.516]

Fig. 10. Unbalanced magnetron vaporization source usiag an electromagnetic field. Fig. 10. Unbalanced magnetron vaporization source usiag an electromagnetic field.
Fig. 12. Arc vaporization source configurations (a) vacuum arc/molten anode, and (b) cathodic arc. Fig. 12. Arc vaporization source configurations (a) vacuum arc/molten anode, and (b) cathodic arc.
The ejector is operated directly by a motive gas or vapor source. Air and steam are probably the two most common of the motive gases. The ejector uses a nozzle to accelerate the motive gas into the suction chamber where the gas to be compressed is admitted at right angles to the motive gas direction. In the suction chamber, also referred to as the mixing chamber, the suction gas is entrained by the motive fluid. The mixture moves into a diffuser where the high velocity gas is gradually decelerated and increased in pressure. [Pg.10]

The vapor vent valves are connected to the tank vapor control valve, and ultimately to the carbon canister by tubing that is resistant to swelling in the presence of fuel vapors. The tubing material must also have a low HC permeation rate, so that the evaporative emissions are not increased due to release of HC molecules. The tank vapor control valve connects the carbon canister to two fuel tank vapor sources the vapor vent valve lines and a refueling vent tube. [Pg.245]

Hydrocarbon vapor migration within the carbon canister is a significant factoi during the real time diurnal test procedure. The phenomenon occurs after the canister has been partially charged with fuel vapors. Initially the hydrocarbons will reside primarily in the activated carbon that is closest to the fuel vapor source. Over time, the hydrocarbons will diffuse to areas in the carbon bed with lower HC concentration. Premature break through caused by vapor migration for twc different canisters is shown in Fig. 17. The canister with the L/D ratio of 5.0 shows substantially lower bleed emissions than the canister with an L/D ratio of 3.0. [Pg.256]

ALOHA has a comprehensive chemical source term library (>700 pure chemicals). The code can address many types of pipe and tank releases, including two-phased flows from pressurized/ cryogenic chemicals. The user may enter a constant or variable vapor source rate and duration of... [Pg.348]

An important method for producing semiconductor layers is the so-called molecular beam epitaxy (MBE) (see [3,12-14] and [15-19]). Here, atoms of the same or of a different material are deposited from the vapor source onto a faceted crystal surface. The system is always far from thermal equilibrium because the deposition rate is very high. Note that in this case, in principle, every little detail of the experimental setup may influence the results. [Pg.884]

In a flash fire, a gas cloud or plume fonns and moves in a downwind direction. Subject to contact witli an ignition source, a wall of flame will flash back to the vapor source, sometimes witli explosive force. The beliavior of flash fire flames is not well documented. It is generally assumed tliat a flash fire will spread tliroughout tlie vapor cloud emitted and tliat it can be calculated by gas outflow dispersion. It is generally assumed tliat tlie fire is lethal to anyone within the contours of tlie cloud who is not wearing special protective gear. ... [Pg.214]

Photolysis from the vaporization source had no effect. [Interestingly, it is possible that such photolysis is responsible for the reaction (186)... [Pg.158]

Another thin film technology based nanoparticle preparation route is gas condensation, in which metal vapor is cooled to high levels of supersaturation in an inert gas ambient [126-128]. In these experiments particles necessarily nucleate in the gas phase. In a promising extension of this technique a pulsed laser beam replaces the conventionally used thermal metal vapor source [120,121,129-134]. [Pg.90]

Rhodium and platinum metals can be more conveniently vaporized with electron-beam vaporization source, in a stainless steel reactor, starting from metal powders deposited into a graphite crucible. [Pg.449]

Cole JE, Rind D, Webb RS, Jonzel J, Healy R (1999) Climahc controls on interatmual variability of precipitahon 5180 Simnlated inflnence of temperature, precipitahon amount, and vapor source region. J Geophys Res 104 14223-14235... [Pg.452]

Method. The laser vaporization source eliminates the material constraints inherent in conventional oven sources. This is accomplished by localizing the heating to a very small area at the surface of the sample and by entraining the vapor produced in a rapid flow of high pressure gas. [Pg.48]

Figure 1 is a schematic of the laser vaporization source. This diagram depicts a pulsed valve on the left which supplies high pressure helium flow directly towards the right. Several workers have also chosen to use continuous helium f ows(2,6,9). In general these sources are modifications of conventional supersonic beam sources. [Pg.48]

Figure. 1. Schematic of essential components of the Exxon group cluster laser vaporization source and fast flow tube chemical reactor. On the far left is a 1 mm diameter pulsed nozzle that emits an -200 ysec long pulse of helium which achieves an average pressure of approximately one atmosphere above the sample rod. Immediately before the sample rod position the tube is expanded to 2 mm diameter. The length of this extender section can be varied form 6 mm to 50 mm depending upon the desired integration time for cluster growth. The reactor flow tube is 10 mm in diameter and typically 50 mm long. The reactants diluted in helium are added and mixed with the flow stream via the second pulsed valve. Figure. 1. Schematic of essential components of the Exxon group cluster laser vaporization source and fast flow tube chemical reactor. On the far left is a 1 mm diameter pulsed nozzle that emits an -200 ysec long pulse of helium which achieves an average pressure of approximately one atmosphere above the sample rod. Immediately before the sample rod position the tube is expanded to 2 mm diameter. The length of this extender section can be varied form 6 mm to 50 mm depending upon the desired integration time for cluster growth. The reactor flow tube is 10 mm in diameter and typically 50 mm long. The reactants diluted in helium are added and mixed with the flow stream via the second pulsed valve.
The field of gas-phase transition metal cluster chemistry has expanded rapidly due to the development of the laser vaporization source and the fast flow chemical reactor. The work from the three major laboratories have been reviewed. Many additional laboratories are developing cluster chemistry programs and will soon certainly make significant contributions. [Pg.69]

The Ti+ ions, produced by using a laser vaporization source (cooled by collisions with He) have been reacted with NH3 to produce the dehydrogenated product ions, [TiNH]+ (100). Many early transition metal ions and Os+ produce the [MNH]+ ion (9,106). The ion [TiNH]+ was reactive toward NH3 and increasing the concentration of NH3 in the drift tube (100) allowed up to four NH3 molecules to add to the [TiNH]+ ion, thus producing five-coordinate Ti in the gas phase. [Pg.376]

There are several preparative methods for the production of bare metal clusters including the fast flow reactor (PER), the fast flow tube reactor (FTR), the SIDT (24), the GIB (23), and a supersonic cluster beam source (SCBS) (198). Essentially, all of these methods are similar. The first process is to vaporize the metal sample producing atoms, clusters, and ions. Laser vaporization is generally favored although FAB or FIB may be used. The sample is located in a chamber or a tube and so vaporization generally takes place in a confined environment. An inert gas such as helium may be present in the vaporization source or may be pulsed in after the ionization process. [Pg.394]

The reactions of some transition metal cluster ions have been described in a review by Parent and Anderson (201). The review covered reactions reported up to 1992 and so the reactions reported here are generally later than 1992. A recent review by Knickelbein (202) discusses the reactions of cation clusters of iron, cobalt, nickel, copper, silver, niobium, and tungsten with small molecules such as H2 and D2. Some of the reactions in Knickelbein s review are included in the following tables of reactions (Tables IV and V). Table IV gives examples of the reactions of transition metal cluster ions and includes the vaporization source, experimental apparatus, the reactants, and the observed product ions. A few examples from these tables will be selected for further discussion. [Pg.395]

Cluster Anions Vaporization Source Apparatus Reactant Initial Products Reference... [Pg.405]

Thermal treatment. See Heat treatment copper-beryllium alloys, 3 654 nickel-beryllium alloys, 3 657-658 of macrofouling organisms, 26 150 Thermal vaporization sources, 24 727 Thermal vaporization rate, 24 725 Thermal waste treatment, 25 831-834, 843-845... [Pg.940]


See other pages where Vaporization source is mentioned: [Pg.2389]    [Pg.179]    [Pg.514]    [Pg.515]    [Pg.516]    [Pg.516]    [Pg.520]    [Pg.520]    [Pg.522]    [Pg.362]    [Pg.477]    [Pg.121]    [Pg.221]    [Pg.292]    [Pg.228]    [Pg.47]    [Pg.156]    [Pg.63]    [Pg.171]    [Pg.194]    [Pg.142]    [Pg.27]   
See also in sourсe #XX -- [ Pg.173 ]




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Laser vaporization source

Laser vaporization source schematic

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Polymer-source chemical vapor deposition

Thermal vaporization sources

Thermal vaporization sources conductive

Thermal vaporization sources flash

Thermal vaporization sources resistively heated

Thermal vaporization sources sublimation

Vapor composition, sources

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