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Voltage, transition

Steady-state voltage regulation Acceptable transitent voltage variation Non-linearity characteristics of load current Percentage distortion in voltage Frequency tolerance Power factor of load Inmsh upon switch-on... [Pg.225]

Beebe JM, Frisbie CD, Kushmerick JG (2008) Measuring relative barrier heights in molecular electronic junctions with transition voltage spectroscopy. ACS Nano 2 827-832... [Pg.113]

Huisman EH, Guedon CM, van Wees BJ, van der Molen SJ (2009) Interpretation of transition voltage spectroscopy. Nano Lett 11 3909-3913... [Pg.113]

Apart from the more conventional transport measurements of molecular junctions at constant bias voltage, alkane(di)thiols-based molecular junctions were also characterized by transition voltage spectroscopy [258, 259], AC voltage modulation [260], and inelastic electron tunneling spectroscopies [261],... [Pg.146]

We will use the circuit of the previous section and find the noise margins (NMH and NML) and input and output transition voltages (Vil, Vih, V0l, V0h)- The transfer function of the NMOS inverter of the previous section was found on page 225, and is repeated below with approximate values of VIL, Vih, Vql, V0h shown on the plot ... [Pg.226]

From these relationships it can be seen that, e.g. in low-resistivity photoconductors with equal response times, or by introduction of deep traps that increase the transition voltage Gscl, photoconductive gains greater than unity may be obtained. For example, in merocyanine dyes doped with electron-acceptor compounds a quantum yield G=2.3 has been measured 14>53>. [Pg.94]

The transition voltage depends on the formation current density. At formation current densities above 2.5 mA/cm, the transition voltage was greater than 60 V. Chang et al. [11] reported that the transition voltage was 150 V when the films were formed at 25 mA/cm in 0.83 M ammonium adipate solution. [Pg.506]

Figure 25.11 shows a representative SCLC study performed on a DIP single crystal along the c -direction between room-temperature and the phase transition. Voltage regimes with different current slopes can be easily identified. [Pg.557]

An alternative explanation of the shift of transition voltage to more positive values during operation involves discharging hypothetical anions at the NPB Alq interface. However, the disappearance of negatively charged species is insufficient to explain the transition voltage shift above the during... [Pg.222]

When the device was tested in nitrogen atmosphere or in air, it exhibited similar electrical behavior. The transition voltages and the current for the device in the high-conductivity state are almost the same as those tested in vacuum whereas the current for the device in the low-conductivity state tested in air is higher by one to two orders of magnitude than that tested in vacuum. These results indicate that oxygen and moisture do not play a role for the electrical transitions. [Pg.1364]

FIGURE 8.17 Dependence of transition voltage on the film thickness for a device Al/Au-2NT NP + PS/Al. The scatters are the experimental data, and the line is a best linear fitting on the data. (From Ouyang, J., Chu, C.W., Tseng, Prakash, A., and Yang, Y, Proc. IEEE, 93, 1287, 2005. With permission.)... [Pg.1373]

This paper presents the numerical calculation of the influence of several device and material parameters on the shape of the optical transition/voltage curve of a twisted nematic display. [Pg.95]

Silva, C.A.B., da Silva, S.J.S., Leal, J.F.P., Pinheiro, F.A., and Del Nero, J. (2011) Electronic transport in oligo- para-phenylene Junctions attached to carbon nanotube electrodes transition-voltage spectroscopy and chirality. Phys. Rev. B,... [Pg.375]

Figure 15. Typical voltage-ampere characteristic of Ta-TajOj-Au diode. Contact area about 10" cm. Note Ohmic region at low voltages and exp(K ) region at high voltages. Mead compared the transition voltage (0.46 V) with the difference in the work functions of the metals (110 A oxide thickness) [from Mead, Phys. Rev. Figure 15. Typical voltage-ampere characteristic of Ta-TajOj-Au diode. Contact area about 10" cm. Note Ohmic region at low voltages and exp(K ) region at high voltages. Mead compared the transition voltage (0.46 V) with the difference in the work functions of the metals (110 A oxide thickness) [from Mead, Phys. Rev.

See other pages where Voltage, transition is mentioned: [Pg.147]    [Pg.91]    [Pg.194]    [Pg.392]    [Pg.190]    [Pg.190]    [Pg.679]    [Pg.99]    [Pg.89]    [Pg.127]    [Pg.366]    [Pg.367]    [Pg.368]    [Pg.506]    [Pg.634]    [Pg.120]    [Pg.121]    [Pg.722]    [Pg.2]    [Pg.219]    [Pg.220]    [Pg.220]    [Pg.220]    [Pg.221]    [Pg.222]    [Pg.222]    [Pg.223]    [Pg.224]    [Pg.1371]    [Pg.342]    [Pg.371]    [Pg.216]   
See also in sourсe #XX -- [ Pg.89 , Pg.127 ]




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