Titanium nitride thin films

Kinetic analysis of titanium nitride thin films by scanning electrochemical microscopy... 

APPROACH CURVE TO TITANIUM NITRIDE THIN FILM... 

Record a CV of the titanium nitride sample in the working solution. According to the CV, select the potential Es to apply to the titanium nitride thin film in order to control the recycling of the mediator (Fig. 51.3). 

Di Leo, Nigro, A., Nobile, G. and Vagilo, R. (1990) Niobium-titanium nitride thin films for superconducting rf accelerator cavities, J. Low Temperature Physics 1%, 41-50. 

RBS has also been used to characterize palladium and tin catalysts on polyetherimide surfaces [229], titanium nitride thin films [230], silicon oxynitride films [231], and silicon nitride films [232]. and to study the laser mixing of Cu-Au -Cu and Cu - W - Cu thin alloy films on Si3N4 substrates [233], and the annealing behavior of GaAs after implantation with selenium [234]. 

LeClair, P Berera, GP Moodera, JS. Titanium nitride thin films obtained by a modified physical vapor deposition process. Thin Solid Films, 2000, 376, 9-15. 

Fix, R. Gordon, R. G. and Hoffman, D. M., Chemical vapor deposition of titanium, zirconium, and hafnium nitride thin films. Chem. Mater. 3 (1991) 1138-1148. 

DLC coatings are already in production in several areas (optical and IR windows) and appear particularly well-suited for abrasion and wear applications due to their high hardness and low coefficient of friction. They have an extremely smooth surface and can be deposited with little restriction of geometry and size (as opposed to CVD diamond). These are important advantages and DLC coatings will compete actively with existing hard coatings, such as titanium carbide, titanium nitride, and other thin film... 

Interconnect. Three-dimensional structures require interconnections between the various levels. This is achieved by small, high aspect-ratio holes that provide electrical contact. These holes include the contact fills which connect the semiconductor silicon area of the device to the first-level metal, and the via holes which connect the first level metal to the second and subsequent metal levels (see Fig. 13.1). The interconnect presents a major fabrication challenge since these high-aspect holes, which may be as small as 0.25 im across, must be completely filled with a diffusion barrier material (such as CVD titanium nitride) and a conductor metal such as CVD tungsten. The ability to fill the interconnects is a major factor in selecting a thin-film deposition process. 

In reflectometry, the light passes through the films to be measured. Beneath the transparent films, there must be an opaque substrate through which light does not pass. The substrate characteristics must be modeled correctly to calculate the thicknesses of the films above. In silicon processing, theoretically, any of the commonly used metal materials, such as the titanium nitride (TiN), aluminum (Al), and tungsten (W), can be used as substrates. However, in reality, whereas a PMD oxide can be measured on the polysilicon material used in poly interconnections, an ILD oxide can not be measured directly on TiN, because the TiN layer used is too thin to be opaque. TiN is semitransparent if its thickness is less than 1000 A. A thin... 

Abstract. The thin-film protective coat of titanium nitride (TiN) plotted to stainless steel (brand 12X18H10T) is explored. The mathematical model and methods of parametric identification are described. Kinetic parameters of hydrogen permeability through stainless steel membrane with TiN protective coat are determined. 

The investigated samples were stainless steel (12X18H10T) membranes with diameter 40 mm and thickness 0.2 mm. Some part of samples was covered by thin titanium nitride film plotted by vacuum ion-plasma sputtering. The typical thickness of the covering was 10 micrometers. Stehiometry of thin-film coats was explored by x-ray analysis method and turned out to be close to ideal. 

TABLE 3. The identification results of some experimental data for stainless steel (12X18H10T) covered by thin-film from titanium nitride... 

The studied coats based on titanium have partly semiconductor and partly metallic properties. The concentration of the free carriers is around 1019c j 3 i.e. greatly (three orders) less than in metal, but also 3-4 orders more than in semiconductors. The Fermi level in titanium nitride is located in the minimum of the state density formed by intersection of titanium d-zone and p-zone of nitrogen [5] (Fig. 8). Therefore such coats are offered as the most perspective thin-film defensive covering. 

Numerous ceramics are deposited via chemical vapor deposition. Oxide, carbide, nitride, and boride films can all be produced from gas phase precursors. This section gives details on the production-scale reactions for materials that are widely produced. In addition, a survey of the latest research including novel precursors and chemical reactions is provided. The discussion begins with the mature technologies of silicon dioxide, aluminum oxide, and silicon nitride CVD. Then the focus turns to the deposition of thin films having characteristics that are attractive for future applications in microelectronics, micromachinery, and hard coatings for tools and parts. These materials include aluminum nitride, boron nitride, titanium nitride, titanium dioxide, silicon carbide, and mixed-metal oxides such as those of the perovskite structure and those used as high To superconductors. 

Physical vapor deposition is used to deposit thin films onto items such as tools (examples drills and saws). Several possible films include titanium nitride and zirconium nitride. Titanium nitride is very popular because it is extremely hard and... 

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