Sputter deposition processes

Yoshida et al. recently disclosed an alternative method that allowed them to produce stable suspensions of gold nanoparticles (1-2 nm in diameter) in nematic liquid crystals [315]. They used a simple sputter deposition process, which allowed them to prepare thin liquid crystal films of well-dispersed gold nanoparticles in both 5CB and E47 (available from Merck) with a nanoparticle size depending on the used nematic liquid crystal. Unfortunately, the authors did not provide any details on whether the nanoparticles were capped with a ligand or bare, non-coated particles, which makes it difficult to assess and compare the reported thermal as well as electro-optic data. However, very similar effects were found as a result of nanoparticle doping, including lower nematic-to-isotropic phase transition temperatures compared to the used pure nematics as well as 10% lower threshold voltages at nanoparticle concentrations below 1 wt% [315]. 

Figure 18 Hydrogen depth profile measured with SNMS in an amorphous hydrogenated Si layer with a P-doped n-layer on top. Curve theoretical depicts the H-profile expected from the partial pressure variations during the sputter deposition process.

Physical vapor deposition (PVD) includes simple evaporation as well as sputter deposition processes. The latter are most common. Figure 12.15 schematically... 

Glatthaar et al. deposited a commercially available PEDOT PSS formulation (Clevios CPP 105D ) on top of the photoactive layer to form inverted solar cells. In contrast TCO layers when used as top electrode will damage the sensitive organic active layer, for example, P3HT PCBM, owing to the sputter-deposition process, and as a consequence the devices will not function. The concept of polymeric top electrodes allows also the fabrication of semitransparent solar cells. ° ... 

S. Berg, I.V. Katardjiev, Modelling of bias sputter deposition processes. Surf. Coat. Technol. 68/69 (1994) 325. 

In quasi-reactive ion plating, as in other quasi-reactive sputter deposition processes, compound material is vaporized in a partial pressure of reactive gas that aids in replacing the species that are lost in the transport from the vaporization source to the substrate. 

Power, target (sputtering) The power (watts) or power density (watts/cm ) applied to the sputtering target. This process variable, along with gas pressure and gas composition, are the parameters most often used to control the sputtering and sputter deposition processes. 

Taguchi M, Hamaguchi S (2007) Md simulations of amorphous Sio2 thin film formation in reactive sputtering deposition processes. Thin Solid Films 515(12) 4879-4882... 

Figure 7 Schematic representations of sputter deposition process (30).

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