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Spin Transistors

Graphene transistor Supramolecular spin-valve Molecular spin-resonator Molecular spin-transistor... [Pg.274]

Spain Transistor http //en.wikipedia.org/ wiki/Spin transistor, can be found under http //en.wikipedia.org/ wiki/Spin transistor (accessed 13 August 2014). [Pg.292]

Spintronics [136-138] is a word used to describe transport in a mesoscopic junction in which the transport medium (or the electrodes) contain unpaired electron spins. There are different aspects of spintronics, but the simplest idea is that one can transport spin without necessarily transporting charge. This leads to the idea of a molecular spin transistor, and other spin phenomena such as spin valves and spin gates. [Pg.26]

Hot electron spin transistors are hybrid metal/semiconductor devices that rely on spin-dependent transport of hot (nonthermalized) electrons rather than electrons near the Fermi level. The spin-valve transistor (SVT) was the first example of this new class of spintronic devices [128, 129], It has a three-terminal structure consisting of a metallic spin-valve base that is sandwiched between two semiconductor substrates, serving as the emitter and the collector, respectively. The electrons in this device are transported perpendicular to the spin-valve layers at energies just above the collector Schottky barrier height. [Pg.443]

While strong spin-dependent hot electron scattering in the ferromagnetic base layers is the reason for large magnetocurrent effects, it also leads to a relatively small collector current. The collector current of hot electron spin transistors can be written as... [Pg.446]

The second spin transistor design that is addressed uses a spin injecting current emitter, hence its acronym SPICE [167, 168], It uses semiconductors in its construction, like the SVT and MTT unlike them, however, its operation also requires spin-dependent transport in the semiconductor itself and thereby arise a small family of additional materials problems which are discussed below. [Pg.449]

The spin transistor as represented in Fig. 34 is a vertical spin transistor. Figure 35 is a schematic picture of a lateral spin transistor as originally proposed by Datta and Das [179]. In this case, a iron emitter injects spins into a 2D electron gas. A Schottky gate can rotate the spin polarization by the Rashba effect, and another iron analyzer detects transmitted spin polarized current. [Pg.452]

Vincent R, Klyatskaya S, Ruben M, Wernsdorfer W, Balestro F (2012) Electronic readout of a single nuclear spin using a molecular spin transistor. Nature 488 357... [Pg.269]


See other pages where Spin Transistors is mentioned: [Pg.274]    [Pg.274]    [Pg.277]    [Pg.280]    [Pg.280]    [Pg.280]    [Pg.281]    [Pg.282]    [Pg.355]    [Pg.608]    [Pg.403]    [Pg.442]    [Pg.443]    [Pg.444]    [Pg.446]    [Pg.448]    [Pg.449]    [Pg.452]    [Pg.248]    [Pg.294]    [Pg.325]    [Pg.326]    [Pg.14]    [Pg.94]    [Pg.42]   


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Hot-electron spin transistors

Molecular spin-transistor

Organic Field-Effect Transistors for Spin-Polarised Transport

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