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Spin valve

W. H. Butler, X.-G. Zhang, D. M. C. Nicholson, T. C. Schulthess, and J. M. MacLaren, First Principles Calculations of Elecuical Conductivity and Giant Magnetoresistance of ColCulCo Spin Valves ,... [Pg.276]

Graphene transistor Supramolecular spin-valve Molecular spin-resonator Molecular spin-transistor... [Pg.274]

Figure 8.18 TbPc2-based molecular spin-tronic devices, (a) Graphene nanotransistor with sensitivity at the single-molecule level [39, 256], (b) Scheme of the supramolecular spin valve architecture [217]. (c) Scheme of the carbon nanotube NEMS. The magnetization reversal of a TbPc 2 SIMM from a spin state Jz = +6 to Jz = -6 results in a rotation... Figure 8.18 TbPc2-based molecular spin-tronic devices, (a) Graphene nanotransistor with sensitivity at the single-molecule level [39, 256], (b) Scheme of the supramolecular spin valve architecture [217]. (c) Scheme of the carbon nanotube NEMS. The magnetization reversal of a TbPc 2 SIMM from a spin state Jz = +6 to Jz = -6 results in a rotation...
Spintronics [136-138] is a word used to describe transport in a mesoscopic junction in which the transport medium (or the electrodes) contain unpaired electron spins. There are different aspects of spintronics, but the simplest idea is that one can transport spin without necessarily transporting charge. This leads to the idea of a molecular spin transistor, and other spin phenomena such as spin valves and spin gates. [Pg.26]

The application of an external magnetic field will bend the orientation of the antiparallel magnetic domains toward the direction of the parallel domains. This situation creates a spin valve that is, charge carriers of the correct magnetic moment orientation may pass through the magnetic layers unscattered by their magnetic... [Pg.298]

Schoonus JJHM, Lumens PGE, Wagemans W, Kohlhepp JT, Bobbert PA, Swagten FUM, Koopmans B (2009) Magnetoresistance in hybrid organic spin valves at the onset of multiple-step tunneling. Phys Rev Lett 103 146601... [Pg.301]

Various experimental methods have been developed for investigating the magnetoelastic properties of thin films and nanoscale magnetic systems. In the following subsections, we discuss the most important ones (i) the magnetoelastic cantilever, (ii) strain induced anisotropy, (iii) magnetostriction in spin valves, (iv) strain modulated ferromagnetic resonance, (v) secondary-electron spin-polarisation, and (vi) strain-induced anisotropy due to the spontaneous strains. [Pg.106]

Here, a is the angle between the magnetisation directions of the two ferromagnetic layers which form the spin-valve. [Pg.110]

Fig. 6. Bending tool for the measurements of magnetostriction in spin valves. After Baril et al. (1999). Fig. 6. Bending tool for the measurements of magnetostriction in spin valves. After Baril et al. (1999).
Fig. 2. M(H) of Py(4 nm)/Cu0.47Ni0.53(5)/Nb(18)/CuNi(5)/Py(4)/FeMn(6). Empty and filled circles denote data measured at T = 2 K (< Tc) and T = 5 K (> Tc), respectively. A minor loop measured between 500 Oe and the structure of an exchange-biased spin valve, Py/CuNi/Nb/CuNi/Py/FeMn, are shown in the inset. Fig. 2. M(H) of Py(4 nm)/Cu0.47Ni0.53(5)/Nb(18)/CuNi(5)/Py(4)/FeMn(6). Empty and filled circles denote data measured at T = 2 K (< Tc) and T = 5 K (> Tc), respectively. A minor loop measured between 500 Oe and the structure of an exchange-biased spin valve, Py/CuNi/Nb/CuNi/Py/FeMn, are shown in the inset.

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