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Graphene transistor

Graphene transistor Supramolecular spin-valve Molecular spin-resonator Molecular spin-transistor... [Pg.274]

Due to its zero-gap electronic stmcture, large graphene sheets are not suitable for FET applications [185, 193]. It has been shown that graphene transistors conduct current even at the point of expected isolator behavior (i.e., Dirac point) [288]. Therefore, current modulation cannot be achieved using macroscopic graphene sheets [185]. In order to have a band gap on graphene, the use of narrow ribbons of... [Pg.161]

Fig. 39 (a) Device schematic of the dual-gate graphene transistor, (b) SEM image of a doublechannel graphene transistor. The channel width is 27 pm, and the gate length is 350 nm for each channel. (Reprinted with permission from [298])... [Pg.162]

Lemme MC (2009) Current status of graphene transistors. Solid State Phenomena 156—158 499-509... [Pg.170]

Radiation methods occupy an important place in the production and investigation of new functional materials, devices, and systems of nanometer size (ion-track membranes, polymeric nanocomposites, 3D nanostructures, metal nanoparticles, carbon nanostructures, etc.). The recent trend towards electronic miniaturization places at the forefront the problem of fabrication of semiconductor nanostructures, which is possible only with the use of radiation lithographic methods. The radiation modification of graphene can play a key role in the development of a new generation of industrial microchips based on graphene transistors, which will lead to a sharp increase in the operation speed and recording density of modem computer and communication systems. [Pg.442]

Liu, G, Stillman, W., Rumyantsev, S., Shao, Q., Shur, M. and Balandin, A. A. (2009), Low-frequency electronic noise in the double-gate single-layer graphene transistors, Applied Physics Letters, 95,033103-3. [Pg.154]

For example, Rong Xiang et al. has developed solution-gated graphene transistor (SGGT) in... [Pg.53]

H. R., Geim, A.K., Ferrari, A.C., and Sood, A.K. (2008) Monitoring dopants by Raman scattering in an electrochem-ically top-gated graphene transistor. [Pg.23]

Shao Q, Liu G, Teweldebrhan D, Balandin AA, Roumyantes S, Shur MS, Yan D (2009) Flicker noise in bUayer graphene transistors. IEEE Electr Device L 30 288-290... [Pg.33]

Fig. 28.31 Physicist Andre Geim holds a graphene transistor in a pair of tweezers. Fig. 28.31 Physicist Andre Geim holds a graphene transistor in a pair of tweezers.
Farmer, D.B., Chiu, H.-Y., Lin, Y.-M., Jenkins, K.A., Xia, F., Avouris, P., 2009. Utilization of a buffered dielectric to achieve high field-effect carrier mobiUty in graphene transistors. Nano Letters 9, 4474—4478. [Pg.394]

Graphene—transistors, supercapacitors, transparent electrical conductors, biosensors... [Pg.539]


See other pages where Graphene transistor is mentioned: [Pg.274]    [Pg.355]    [Pg.115]    [Pg.37]    [Pg.42]    [Pg.964]    [Pg.214]    [Pg.935]    [Pg.441]    [Pg.53]    [Pg.54]    [Pg.374]    [Pg.149]    [Pg.175]    [Pg.480]    [Pg.160]    [Pg.382]    [Pg.265]    [Pg.386]    [Pg.387]    [Pg.387]    [Pg.388]    [Pg.396]    [Pg.396]    [Pg.1039]   
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