Spin-dependent transport

Petta JR, Slater SK, Ralph DC (2004) Spin-dependent transport in molecular junctions. Phys Rev Lett 93 136601... 

Spin-Dependent Transport of Electrons in a Shuttle Structure... 

Finally, we want to mention briefly three important fields of research, that we do not consider in the present review the theory of Kondo effect [205,228-234], spin-dependent transport [235-239], and time-dependent transport [83, 240-243],... 

Hot electron spin transistors are hybrid metal/semiconductor devices that rely on spin-dependent transport of hot (nonthermalized) electrons rather than electrons near the Fermi level. The spin-valve transistor (SVT) was the first example of this new class of spintronic devices [128, 129], It has a three-terminal structure consisting of a metallic spin-valve base that is sandwiched between two semiconductor substrates, serving as the emitter and the collector, respectively. The electrons in this device are transported perpendicular to the spin-valve layers at energies just above the collector Schottky barrier height. 

The second spin transistor design that is addressed uses a spin injecting current emitter, hence its acronym SPICE [167, 168], It uses semiconductors in its construction, like the SVT and MTT unlike them, however, its operation also requires spin-dependent transport in the semiconductor itself and thereby arise a small family of additional materials problems which are discussed below. 

THE EQUIVALENT CIRCUIT OF SPIN-DEPENDANT TRANSPORT IN DOUBLE-BARRIER RESONANT TUNNELING... 

The results of simulation show that proposed EC results in good description of spin-depend transport in RTNS if compare with tendencies predicted on the Green fiinctions basis. 

The discussion that follows uses Wigner function numerical simulations to illustrate the behavior of barrier type devices. We examine double barrier, single barrier, heterointerfaces and superlattices, making the case for a DMS technology. We first present some background material, on the spin sphtting, the development of the spin dependent transport, then illustrate with calculations, with one case devoted to increased functionality of the device. 

In the first part of this chapter it will be reported on spin dependent transport and surface magnetic properties of itinerant magnetic substrates, thin Fe(l 10) and Co(OOOl) films evaporated on W(110), which were investigated by these electron emission techniques. Subsequently, the behavior of adsorbates will be discussed from the point of view whether they change the properties of the surface and whether they feel the magnetism of the underlying substrate. This discussion will be carried out for the example of oxygen which adsorbs dissociatively on the above mentioned surfaces. 

S. Maekawa, T. Shinjo, Spin Dependent Transport in Magnetic Nanostructures (Taylor Francis, London, 2002)... 

Perovskite materials have many interesting and spectacular properties such as high temperature superconductors, magneto resistance, ferroelectricity, charge ordering, spin dependent transport, high thermo power, optical properties, etc. As well as their applications in catalyst electrodes in certain types of fuel cells, memory devices, etc. 

Perovskite materials (ABX3) exhibit many fascinating properties from both theoretical and application perspectives, including ferroelectricity, superconductivity, charge ordering, and spin-dependent transport. The interplay of compositional, structural, optical, and transportation properties is commonly observed in this family, making them promising candidates as photocatalysts. Perovskites are characterised by a crystal structure similar to that of calcium titanium oxide (CaTiOs). Normally A and B sites are occupied by two cations with very different sizes (dA > dfi), whereas X (normally O) is an anion that bonds to both. In the ideal cubic-symmetry structure, the A and B cations are 12- and sixfold coordinated in bulk and surrounded by cuboctahedron and octahedron of anions, respectively. 

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