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Spintronic devices

Bis(phthalocyaninato) Lanthanide(lll) Complexes - from Molecular Magnetism to Spintronic Devices... [Pg.223]

Molecular Spintronic Devices on the Base of [TbPc2]° SIMs... [Pg.272]

In this chapter, we have reviewed the family of LnPc2 compounds with an emphasis on its terbium analogue, which covers their synthetic approaches, bulk magnetism, magnetism on different substrates and the fabrication towards different molecular schemes of spintronic devices. [Pg.281]

Zhan YQ, de Jong MP, Li EH, Dediu V, Fahlman M, Salaneck WR (2008) Energy level alignment and chemical interaction at Alqa/Co interfaces for organic spintronics devices. Phys Rev B 78 045208... [Pg.300]

It is also possible to prepare V205-based vanadium nanotubes from surfactant solution. They are formed using oxotriisopropoxovanadium(V) and have been found to have unique electronic properties that can be controlled by electron doping [5], In fact, these tubes offer the possibility of spin control and, therefore, have significant potential in the development of spintronic devices. [Pg.217]

The present study has illustrated the subtle interplay between geometric properties such as film thickness and the spin structure in magnetic trilayers. We hope that our results will lead to a deeper understanding of magnetic heterostructures and will help to design and improve future spintronic devices. [Pg.193]

Hot electron spin transistors are hybrid metal/semiconductor devices that rely on spin-dependent transport of hot (nonthermalized) electrons rather than electrons near the Fermi level. The spin-valve transistor (SVT) was the first example of this new class of spintronic devices [128, 129], It has a three-terminal structure consisting of a metallic spin-valve base that is sandwiched between two semiconductor substrates, serving as the emitter and the collector, respectively. The electrons in this device are transported perpendicular to the spin-valve layers at energies just above the collector Schottky barrier height. [Pg.443]

For a comparison of the magnetic field sensitivity of the SVT and MTT with that of other spintronic devices it is illustrative to define the hot-electron transmission polarization of a ferromagnetic layer as... [Pg.444]

Rather than using electronics to turn switches on/off, spintronic devices use electronic spins to represent information. This will allow these devices to process bilUons of pieces of information simultaneously, greatly increasing the speed and power of electronic devices. For more information on the future of spintronics, see http //www.spintronics-info.com/. [Pg.440]


See other pages where Spintronic devices is mentioned: [Pg.62]    [Pg.149]    [Pg.194]    [Pg.216]    [Pg.228]    [Pg.228]    [Pg.229]    [Pg.229]    [Pg.229]    [Pg.259]    [Pg.263]    [Pg.266]    [Pg.272]    [Pg.272]    [Pg.273]    [Pg.273]    [Pg.274]    [Pg.278]    [Pg.279]    [Pg.280]    [Pg.282]    [Pg.282]    [Pg.283]    [Pg.354]    [Pg.357]    [Pg.289]    [Pg.93]    [Pg.442]    [Pg.87]    [Pg.115]    [Pg.180]    [Pg.134]    [Pg.449]    [Pg.453]    [Pg.530]    [Pg.359]   


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Spintronic

Spintronics

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