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Solid-state diffusion, theory

Continuum Theory. Solid-state diffusion is described in terms of a continuity equation known as Fick s second law ... [Pg.275]

Dislocation theory as a portion of the subject of solid-state physics is somewhat beyond the scope of this book, but it is desirable to examine the subject briefly in terms of its implications in surface chemistry. Perhaps the most elementary type of defect is that of an extra or interstitial atom—Frenkel defect [110]—or a missing atom or vacancy—Schottky defect [111]. Such point defects play an important role in the treatment of diffusion and electrical conductivities in solids and the solubility of a salt in the host lattice of another or different valence type [112]. Point defects have a thermodynamic basis for their existence in terms of the energy and entropy of their formation, the situation is similar to the formation of isolated holes and erratic atoms on a surface. Dislocations, on the other hand, may be viewed as an organized concentration of point defects they are lattice defects and play an important role in the mechanism of the plastic deformation of solids. Lattice defects or dislocations are not thermodynamic in the sense of the point defects their formation is intimately connected with the mechanism of nucleation and crystal growth (see Section IX-4), and they constitute an important source of surface imperfection. [Pg.275]

Fej04 . A similar correspondence between theory and practice has been found for growth of Fej04 by the solid state reactions from FeO and Fe, , between 600 and 1 200°C. The growth rate of FeO is within 10% of the theoretical rate expected from Fe lattice diffusion, calculated according to the Wagner theory . [Pg.970]

Gostoli, C., Pilati, F., Sarti, G. C. and Di Giacomo, B Chemical kinetics and diffusion in poly(butylene terephthalate) solid-state poly condensation experiments and theory, J Appl. Polym. Sci., 29, 2873-2887 (1984). [Pg.192]

A general treatment of a diffusion-controlled growth of a stoichiometric intermetallic in reaction between two two-phase alloys has been introduced by Paul et al. (2006). A reaction couple in which a layer of Co2Si is formed during inter-diffusion from its adjacent saturated phases was used as a model system. In the discussion it has been emphasized that the diffusion couple is undoubtedly one of the most efficient and versatile techniques in solid-state science it is therefore desirable to have alternative theories that enable us to deduce the highest possible amount of information from the data that are relatively easily attainable in this type of experiments. [Pg.66]

In 1937, dost presented in his book on diffusion and chemical reactions in solids [W. lost (1937)] the first overview and quantitative discussion of solid state reaction kinetics based on the Frenkel-Wagner-Sehottky point defect thermodynamics and linear transport theory. Although metallic systems were included in the discussion, the main body of this monograph was concerned with ionic crystals. There was good reason for this preferential elaboration on kinetic concepts with ionic crystals. Firstly, one can exert, forces on the structure elements of ionic crystals by the application of an electrical field. Secondly, a current of 1 mA over a duration of 1 s (= 1 mC, easy to measure, at that time) corresponds to only 1(K8 moles of transported matter in the form of ions. Seen in retrospect, it is amazing how fast the understanding of diffusion and of chemical reactions in the solid state took place after the fundamental and appropriate concepts were established at about 1930, especially in metallurgy, ceramics, and related areas. [Pg.9]

In spite of these theoretical results, dendritic-type forms for solid-state precipitation processes are the exception rather than the rule. This may happen because the theory is for pure diffusion-limited growth. Interface-limited growth tends to be stabilizing because the composition gradient close to a growing precipitate is less steep when the reaction is partly interface-limited. Thus, G is smaller, and Eq. 20.73 shows that this is a stabilizing effect. This and several other possible explanations for the paucity of observations for unstable growth forms in solid-state... [Pg.523]

A correlation between surface and volume processes is described in Section 5. The atomic-molecular kinetic theory of surface processes is discussed, including processes that change the solid states at the expense of reactions with atoms and molecules of a gas or liquid phase. The approach reflects the multistage character of the surface and volume processes, each stage of which is described using the theory of chemical kinetics of non-ideal reactive systems. The constructed equations are also described on the atomic level description of diffusion of gases through polymers and topochemical processes. [Pg.351]


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See also in sourсe #XX -- [ Pg.131 , Pg.132 , Pg.133 , Pg.134 ]




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