SIMS secondary-ion mass

SIMS Secondary-ion mass spectroscopy [106, 166-168] (L-SIMS liquids) [169, 170] Ionized surface atoms are ejected by impact of -1 keV ions and analyzed by mass spectroscopy Surface composition... 

SIMS Secondary Ion mass spectroscopy A beam of low-energy Ions Impinges on a surface, penetrates the sample and loses energy In a series of Inelastic collisions with the target atoms leading to emission of secondary Ions. Surface composition, reaction mechanism, depth profiles... 

SIM. selected (or single) ion monitoring SIMS, secondary ion mass spectrometry SIR. selected (or single) ion recording... 

NIRMS = noble-gas-ion reflection mass spectrometry OSEE = optically stimulated exoelectron emission PES = photoelectron spectroscopy PhD = photoelectron diffraction SIMS = secondary ion mass spectroscopy UPS = ultraviolet photoelectron spectroscopy ... 

This assumes that the gas-solid exchange kinetics at the interface is rapid. When this process affects the exchange kinetics significantly dieii analysis of concentrations layer by layer in die diffused sample is necessaty. This can be done by the use of SIMS (secondary ion mass spectrometry) and the equation used by Kihier, Steele and co-workers for this diffusion study employs a surface exchange component. 

The control of materials purity and of environmental conditions requires to implement physico-chemical analysis tools like ESC A, RBS, AUGER, SEM, XTM, SIMS or others. The principle of SIMS (Secondary Ion Mass Spectroscopy) is shown in Eig. 31 an ion gun projects common ions (like 0+, Ar+, Cs+, Ga+,. ..) onto the sample to analyze. In the same time a flood gun projects an electron beam on the sample to neutralize the clusters. The sample surface ejects electrons, which are detected with a scintillator, and secondary ions which are detected by mass spectrometry with a magnetic quadrupole. 

The impact of an ion beam on the electrode surface can result in the transfer of the kinetic energy of the ions to the surface atoms and their release into the vacuum as a wide range of species—atoms, molecules, ions, atomic aggregates (clusters), and molecular fragments. This is the effect of ion sputtering. The SIMS secondary ion mass spectrometry) method deals with the mass spectrometry of sputtered ions. The SIMS method has high analytical sensitivity and, in contrast to other methods of surface analysis, permits a study of isotopes. In materials science, the SIMS method is the third most often used method of surface analysis (after AES and XPS) it has so far been used only rarely in electrochemistry. 

M. Anderle, M. Bersani, L. Vanzetti and S. Pederzoli, State of art in the SIMS (secondary ion mass spectrometry) application to archaeometry studies, Macromolecular Symposia, 238, 11 15 (2006). 

EWS Pish and Wildlife Service SIMS secondary ion mass spectrometry... 

The term 1 or h indicates low or high coverage of adsorbed ethene, as inferred from ethene exposures.h TPD, temperature-programmed desorption LITD, laser-induced thermal desorption 1 FT-MS, Fourier-transform mass spectrometry SIMS, secondary-ion mass spectrometry MS, mass spectrometry T-NEXAFS, transient near-edge X-ray absorption fine structure spectroscopy RAIRS, reflection-absorption infrared spectroscopy. d Data for perdeut-erio species.1 Estimated value. 

CC sims = secondary ion mass spectroscopy. dd iss = ion scattering spectroscopy. 

There are several methods available to probe the actual interphase to demonstrate the existence of interpenetrating networks directly. Among these techniques are depth profiling by SIMS (secondary ion mass spectrometry) or SNMS (sputtered neutral mass spectrometry), and the use of X-ray photoelectron spectroscopy (XPS) depth profiling or Auger electron spectroscopy (AES) depth profiling. 

Electron beam techniques have aided electrical measurements greatly, but these methods often lack sensitivity (X-ray and Auger spectroscopy and ESCA [electron spectroscopy for chemical analysis]) and accuracy (SIMS [secondary-ion mass spectrometry], etc.), two attributes that are of prime importance in IC process technology. Fortunately, materials can be analyzed with both accuracy and sensitivity by wet chemical analysis. 

SIMS. Secondary Ion Mass Spectrometry is particularly suited for ionization of nonvolatile, polar, and thermally labile molecules. Liquid SIMS, using liquid glycerol matrices, is best done in the differentially-pumped external ion source, because matrix effects and the high vapor pressure of glycerol make liquid SIMS unsuitable for single cell low-pressure FTMS. 

Technique abbreviations AES = Auger Electron Spectroscopy EXAFS = Extended X-Ray Absorption Fine Structure ISS = Ion Scattering Spectroscopy SIMS = Secondary Ion Mass Spectroscopy UPS = Ultraviolet Photoelectron Spectroscopy XANES = X-Ray Absorption Near Edge Structure XPS (or ESCA) = X-Ray Photoelectron Spectroscopy bAnalysis type C = chemical, E = elemental... 

---