Semiconductors Insulator films

Phosphorus oxynitride, PON, is a useful starting product, as a phosphorus and nitrogen source, to prepare various nitridooxophos-phates, in particular phosphorus oxynitride glass compositions (211). Moreover, it shows as a material excellent chemical stability with potential applications in several domains. In microelectronics, for example, PON has been used to form by evaporation insulating films for the passivation of III-V InP substrates and the elaboration of MIS (metal-insulator-semiconductor) structures (190, 212-215). PON could have also valuable properties in flame retardancy (176,191,216). 

Screen printing Metals, carbon/graphite, semiconductors, insulators Apply liquid solution or suspension through fine mesh screen mask to form pattern then convert film to desired form as above... 

Physical vapor deposition (PVD) is used for the deposition of semiconductor, insulator, and metal layers in the fabrication of a variety of electronic devices. Reactors for PVD are characterized by direct line-of-sight transport of molecular species from the gas phase to the desired substrate, where they react to form solid films with the desired properties. A reactor-and-reaction analysis of PVD quantitatively examines the generation of gas-phase species, spatial distribution of species arriving on the substrate, and surface reactions leading to film growth. 

A semiconductor substrate 30 is covered with an insulating film 31. Each pixel comprises a transparent storage electrode 2Y, an opaque control electrode Z and an opaque detecting electrode 2X. 

A high-resistance compound semiconductor film 13 is formed on a silicon substrate 3 at openings in an insulating film 6. A detector element 2 is composed of an n-type and a p-type HgCdTe layer 14 and 15 formed on the film 13. The detector element is connected to an electrode 24 and to a MOS transistor in the silicon substrate by a connector 21 A. 

Thin-film transistors (TFTs) are among the key building blocks of these circuits [2]. Figure 10.1 shows a cross-sectional view of a TFT. A thin insulating film (i.e. the gate dielectric) isolates source and drain electrodes and a semiconductor layer... 

The metal-insulator—semiconductor (MIS) structure is employed in the heterophase blocking where the thickness of the insulator used is the key factor in satisfying the blocking requirement. Differently from the solar cell with MIS structure, in which an insulating film tens of angstroms thick is used to avoid the back-diffusion of photoinduced carriers (Wronski et al., 1981), the photoreceptor of electrophotography has necessarily a rather thick insulating film to block carrier transport. 

F. Herman, Electronic structure of the Si-Si02 interface, in Insulating Films on Semiconductors, M. Schulz and G. Pensl (eds.), p. 2, Springer-Verlag, Berlin, 1981. 

The simplest and most widely used model to explain the response of organic photovoltaic devices under illumination is a metal-insulator-metal (MIM) tunnel diode [55] with asymmetrical work-function metal electrodes (see Fig. 15-10). In forward bias, holes from the high work-function metal and electrons from the low work-function metal are injected into the organic semiconductor thin film. Because of the asymmetry of the work-functions for the two different metals, forward bias currents are orders of magnitude larger than reverse bias currents at low voltages. The expansion of the current transport model described above to a carrier generation term was not taken into account until now. 

Fontaine, P. et al., Octadecyltrichlorosilane monolayers as ultrathin gate insulating films in metal insulator semiconductor devices, AppZ. Phys. Lett. 62, 2256-2258, 1993. Yoon, M.H. et al.. Low-voltage organic field-effect transistors and inverters enabled by ultrathin cross-linked polymers as gate dielectrics, J. Am. Chem. Soc. 127 (29), 10388-10395, 2005. 

In thin-film electroluminescence, a transparem front electrode and an opaque back electrode are used. The former may be a thin layer of indium-tin oxide, the latter a thin layer of aluminium. In the early 1970s a MISIM device (metal-insulator-semiconductor-insulator-metal) with a ZnS Mn electroluminescent layer was shown to maintain bright luminescence for thousands of hours. The insulators can be selected from a large groups of oxides. 

The internal photoemission of Pd/a-Si H diodes was also reported by Yamamoto et al. (1981). They also noted that the data did not fit the expected behavior. In fact, they found a better fit to a T / dependence. This dependence is expected for a thin oxide or insulator film between the metal and semiconductor. 

If the system under investigation, for example a thin film, is deposited on a semiconductor insulator structure, the photocurrent decreases as shown in Fig. 25 (curve b). The difference in photocurrent is a function of the complex impedance of the layer added. Local differences in the impedance can be detected in the scanning mode. An additional variation of the modulation frequency of the light results in ac-impedance spectra with lateral resolution. 

Photosensitive PI resin compositions are used for insulating films in electronic applications, such as semiconductor and LCD devices. In optical devices, increased transparency is a desirable property. Basically, it is differentiated between ... 

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