Semiconductors elastic

In this chapter nonlinear piezoelectric and dielectric behavior shock-induced electrical conductance semiconductors elastic physical properties. 

Table 1 Hsts the properties of several semiconductors relevant to device design and epitaxy. The properties are appropriate to the 2incblende crystal stmcture in those cases where hexagonal polytypes exist, ie, ZnS and ZnSe. This first group of crystal parameters appHes to the growth of epitaxial heterostmctures the cubic lattice constant, a the elastic constants, congment sublimation temperature, T. Eor growth of defect-free...

The data indicate that elastic shock-compression resistance measurements can provide data on the effects of strain on energy gaps and deformation potentials in semiconductors. Drift mobility measurements on holes in germanium and resistivity measurements on samples with different dopings would appear to be of considerable interest. 

The acoustic microscopy s primary application to date has been for failure analysis in the multibillion-dollar microelectronics industry. The technique is especially sensitive to variations in the elastic properties of semiconductor materials, such as air gaps. SAM enables nondestructive internal inspection of plastic integrated-circuit (IC) packages, and, more recently, it has provided a tool for characterizing packaging processes such as die attachment and encapsulation. Even as ICs continue to shrink, their die size becomes larger because of added functionality in fact, devices measuring as much as 1 cm across are now common. And as die sizes increase, cracks and delaminations become more likely at the various interfaces. 

Other forces can arise as a result of elastic strain on the growing film, which can be due to a surface-induced ordering in the first few layers that reverts to the bulk liquid structure at larger distances. This elastic energy is stored in intermolecular distances and orientations that are stretched or compressed from the bulk values by the influence of the substrate at short distances [7]. Similar phenomena are well known to occur in the growth of epitaxial layers in metals and semiconductors. 

Bulk elastic modulus, of binary compound semiconductors, 22 145, 146-147t Bulk enzymes, from genetically engineered microbes, 22 480 Bulk erosion, 9 78 Bulk fluid velocity method, 16 688 Bulk gallium nitride, supercritical ammonia solution growth of, 14 96-97 Bulk gases... 

If the specimen crystal is curved, there will be a range of positions where the diffraction conditions are satisfied even for a plane wave. The rocking curve is broadened. It is simple to reduce the effect of curvature by reducing the collimator aperture. For semiconductor crystals it is good practice never to mn rocking curves with a collimator size above 1 mm, and 0.5 mm is preferable. Curved specimens are common if a mismatched epilayer forms coherently on a substrate, then the substrate will bow to reduce the elastic strain. The effect is geometric and independent of the diffraction geometiy. Table 2.1 illustrates this effect. 

The rapid developments in the microelectronics industry over the last three decades have motivated extensive studies in thin-film semiconductor materials and their implementation in electronic and optoelectronic devices. Semiconductor devices are made by depositing thin single-crystal layers of semiconductor material on the surface of single-crystal substrates. For instance, a common method of manufacturing an MOS (metal-oxide semiconductor) transistor involves the steps of forming a silicon nitride film on a central portion of a P-type silicon substrate. When the film and substrate lattice parameters differ by more than a trivial amount (1 to 2%), the mismatch can be accommodated by elastic strain in the layer as it grows. This is the basis of strained layer heteroepitaxy. 

A. -B. Chen, A. Sher and W. T. Yost, Elastic Constants and Related Properties of Semiconductor Compounds and Their Alloys D. R. Clarke, Fracture of Silicon and Other Semiconductors H. Siethoff, The Plasticity of Elemental and Compound Semiconductors S. Guruswamy, K. T. Faber and J. P. Hirth, Mechanical Behavior of Compound Semiconductors... 

Elastic-inelastic collision model, Szilard-Chalmers reaction and, 1 269 Electrical conduction, in organic superconductors, 29 278-286 Electrical conductivity of chalcogenide halide compounds, 23 331 of Group IB, 23 337-339, 342, 346-349 photoelectric effects, 23 368, 410 semiconductors, 23 368, 390, 395-396, 400-402, 410-412 superconductors, 23 375-377 of graphite intercalation compounds, 23 290, 294, 309-310, 312, 317-318 Electric discharges arc type, 6 146-147 chemical reactions in, 6 189-191 chemical reactions in, 6 143-206... 

Physical properties of solid materials which are greatly influenced by the presence of defects of lattice order in real single crystals are called structural-sensitive properties, and are distinguished from intrinsic properties, which are determined by the elements constituting the crystal, for example the chemical bonds, the structure, etc. Color, plasticity, glide, and semiconductor properties are structural-sensitive properties, whereas density, hardness, elasticity, and optical, thermal, and magnetic properties are the intrinsic properties. Structural-sensitive... 

---