Semiconductors elastic constants

Table 1 Hsts the properties of several semiconductors relevant to device design and epitaxy. The properties are appropriate to the 2incblende crystal stmcture in those cases where hexagonal polytypes exist, ie, ZnS and ZnSe. This first group of crystal parameters appHes to the growth of epitaxial heterostmctures the cubic lattice constant, a the elastic constants, congment sublimation temperature, T. Eor growth of defect-free...

A. -B. Chen, A. Sher and W. T. Yost, Elastic Constants and Related Properties of Semiconductor Compounds and Their Alloys D. R. Clarke, Fracture of Silicon and Other Semiconductors H. Siethoff, The Plasticity of Elemental and Compound Semiconductors S. Guruswamy, K. T. Faber and J. P. Hirth, Mechanical Behavior of Compound Semiconductors... 

A.-B. Chen, A. Sher, and W. T. Yost, Elastic Constants and Related Properties of Semiconductor Compounds and Their Alloys... 

The same analysis that has been made here for the zincblende semiconductors can of course be carried out for the wurtzitc structure. For comparison with experiment, another approach is simpler that is to compare the formulae obtained here with effective cubic elastic constants, which were obtained by Marlin (1972b). These were estimates of what the constants of wurtzitc compounds would... 

Elastic constants (in 10" erg/cm ) and force constants (in eV) for tetrahedral semiconductors. 

DEPENDENCE OF THE GLASS TRANSITION POINT Tg AND THE ELASTIC CONSTANTS ON THE STRUCTURE OF GLASSY SEMICONDUCTORS ... 

D Table 4.1-4 Elastic constants c,t of Group IV semiconductors and IV-IV compounds ... 

The parameters in the Tersoff model have been calculated for the compound semiconductor alloys by fitting to a database of experimental and theoretical values available for cohesive energies, lattice parameters, bond lengths, elastic constants, etc. (Ashu et al. 1995 Powell et al. 2007). Then, MD simulations have been used to predict properties including cohesive energies, elastic constants. 

Maranganti R and Sharma P (2007) A novel atomistic approach to determine strain-gradient elasticity constants Tabulation and comparison for various metals, semiconductors, silica, polymers and the (Ir) relevance for nanotechnologies, J Meeh Phys Solids 55 1823-1852. 

In the case of QW heterostructures, the electron and hole of an exciton are well confined within the layer since the band gap discontinuity is quite large, especially for III-V heterostructuies. On the other hand, dielectric and lattice properties of group III (II) and group V (VI) semiconductors (dielectric permittivities, lattice constants, elastic moduli) are in close proximity in their values [7]. Therefore, we model our system by the localized quasi-2D IS-exciton interacting with bulk-like phonon modes in the QW with infinite potential barriers. We describe such an excitonic state by quasi-2D wave fimction... 

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