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Semiconductor parylene

A variety of substituted parylene derivatives have been used as gate dielectrics for TFTs in a control study to investigate the effect of surface energy on channel characteristics and mobility [55]. It was found that the field effect mobility for an amorphous polymer semiconductor (MEH-PPV) increases with increasing surface hydrophobicity (a result that has been seen with amorphous poly(triarylamine)s [PTAAs] also) [5]. [Pg.239]

The ability to deposit parylene C dielectrics using vapor phase deposition methods makes it very useful for sensitive semiconductors (in the case of top gate devices), such as single crystals. Researchers at Rutgers and Bell Labs have made extensive use of this dielectric in single-crystal field-effect transistors [56,57]. [Pg.239]

The process for the thennal sensor network is as follows. Organic diodes, to be used as sheet-type thermal sensors, are manufactured on an ITO-coated PEN film. A 30-mn thick p-type semiconductor of copper phthalocyanine (CuPc) and a 50-nm thick n-type semiconductor of 3,4,9,10-perylene-tetracarboxylic-diimide (PTCDI) are deposited by vacuum sublimation. A 150-mn thick gold film is then deposited to form cathode electrodes having an area of 0.19 mm. The film with the organic diodes is coated with a 2-pm thick parylene layer and the electronic interconnections are made by the method similar to that mentioned before. The diode film is also mechanically processed to form net-shaped structures. Finally, to complete the thermal sensor network, we laminated the transistor and diode net films together with silver paste patterned by a microdispenser. This is shown in Figure 6.3.11. [Pg.540]

Several types of parylene dimer are commercially available (and many more have been synthesized and reported in the scientific and patent literature), the most popular are C, D, and N. Parylene-C is often used as an encapsulant for organic semiconductors, and is also sometimes used as a gate dielectric. [Pg.42]

The solution to photolithographically patterning the active layer of OFETs is to protect the semiconductor from materials it is not compatible with (i.e. organic solvents and water). One approach is to use water soluble resists which do not induce the phase transformation [57]. Another is to encapsulate the transistors using parylene first, and then proceed with normal photolithography and patterning [58]. A third approach is to use fluorinated or supercritical C02"based resist materials which also do not interact with pentacene or other organic semiconductors [59]. [Pg.44]

A subtractive process using pentacene as the semiconductor material based on [76] is shown in Fig. 4.14. The process uses parylene as the gate dielectric and the encapsulation layer for a semiconductor layer using pentacene. The encapsulation layer process protects the pentacene against exposure to the solvents and other reagents used in the photolithographic process. [Pg.51]

Semiconductor and blanket deposited encapsulation (pentacene and parylene)... [Pg.52]

An alternative to encapsulating OFETs with parylene is to use an aqueous photoresist system which does not induce the destructive phase transformation which is observed when metastable oligomeric semiconductors are exposed to other solvents. Since the resist is developed in pure water, exposure to strong bases or solvent developers is also avoided. The process shown is based on Kane, et al. [57]. [Pg.52]

Parylenes have also been used as an additional protective layer to the inorganic glass passivations used in semiconductor device fabrication. The main advantage of this extra coating is its ability to cover the normally exposed bond pad areas, giving protection to the exposed aluminium. Similar applications can also be envisaged for the coating of hybrid assemblies. [Pg.353]


See other pages where Semiconductor parylene is mentioned: [Pg.442]    [Pg.442]    [Pg.442]    [Pg.442]    [Pg.315]    [Pg.442]    [Pg.442]    [Pg.494]    [Pg.162]    [Pg.35]    [Pg.59]    [Pg.239]    [Pg.572]    [Pg.52]    [Pg.542]    [Pg.58]    [Pg.58]    [Pg.68]    [Pg.1783]    [Pg.285]    [Pg.9401]    [Pg.9401]    [Pg.1278]    [Pg.85]    [Pg.284]    [Pg.300]    [Pg.85]   
See also in sourсe #XX -- [ Pg.35 ]




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