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Semiconductor nanowire thin-film

Duan, X. 2007. Assembled semiconductor nanowire thin-films for high-performance flexible macroelectronics. MRS Bull. 32 134-141. [Pg.30]

Duan, X. Niu, C. Sahi, V. Chen, J. Parce, J. W. Empedocles, S. Goldman, J. L. 2003. High-performance thin-film transistors using semiconductor nanowires and nanoribbons. Nature 425 274-278. [Pg.346]

Wang DH, Jakobson HP, Kou R, Tang J, Fineman RZ, Yu DH, Lu YF (2006) Metal and semiconductor nanowire network thin films with hierarchical pore structures. Chem Mater 18 4231 237... [Pg.226]

Chapter 10 presents theoretical work on the origin of magnetism in Mn- and Cr-doped porous GaN with promise towards a room temperature dilute magnetic semiconductor, an essential component for spin-tronic applications. The large surface areas of porous material allow very high concentration of surface-specific atomic arrangements to be formed. Extensive computations have been performed on (Ga,Mn)N and (Ga,Cr)N systems from zero-dimensional clusters to one-dimensional nanowires, nanotubes, and nanoholes, two-dimensional surfaces and thin films, and three-dimensional crystals. [Pg.339]

Nanostructured wide bandgap materials functionalized with Pd or Pt are even more sensitive than their thin film counterparts because of the large surface-to-volume ratio (Lim et al, 2008 Johnson et al, 2009). 1-D semiconductor nanomaterials (such as carbon nanotubes (CNTs), Si nanowires,... [Pg.188]

Thin films of ceramic materials are important both scientifically and commercially. For example, the operation of semiconductor devices relies on thin dielectric layers. In this chapter we described some of the main techniques used to produce such films. The conunon feature of all techniques for growing thin films is that we require a vacuum chamber. Deposition may occur at atmospheric pressure (e.g., some versions of CVD), but prior to deposition the chamber was evacuated. The choice of technique is based on several factors, including the type of material being deposited, whether we need an epitactic layer, and often the cost. The substrate plays an important role in the growth of thin films and thus we need to know the properties of the substrate and how to prepare it. Some of the techniques we described, such as PECVD, are important not only for growing thin films but also for producing nanostructures such as nanowires and nanosprings. [Pg.505]

On the other hand, the body temperature is another exploitable energy source. Feinaeugle et al. (2013) used a fiber-based thermoelectric power generator fabricated by evaporating thin Ni-Ag films on flexible textile substrates and they danonstrated a maximum power harvesting of 2 nW. Semiconductor nanowires exhibit promise for thermoelectric properties, but new, advanced fabrication techniques need to be developed. [Pg.88]

Within the following sections we will discuss fundamental aspects of nanoparticle processing including the most important steps of characterization, particle formation, stabilization and post processing to end up with some general conclusions for a future process design. As model materials we use technically relevant semiconductor nanoparticles, so-called quantum dots (QDs) with direct band gap (ZnO, manganese doped ZnS and PbS(e)) and silver nanowires which have been proven to be excellent transparent electrodes for thin film solar cells [27]. [Pg.281]


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