Semi doping

FIGURE 5.23. Radial distribution functions gxY(r) in potassium (a) fully-doped and (b) semi-doped ... 

Although a great number of compound semiconductor devices make use of epitaxy to form the cote vertical stmcture of the device, ion implantation (qv) is a powerful tool in creating both horizontal and vertical modifications to a device. Ion implantation can be used to dope a semiconductor either fi- or / -type by using appropriate species. Implantation can also be used to render a region semi-insulating or to initiate multilayer intermixing. 

Zinc—bromine storage batteries (qv) are under development as load-leveling devices in electric utilities (64). Photovoltaic batteries have been made of selenium or boron doped with bromine. Graphite fibers and certain polymers can be made electrically conductive by being doped with bromine. Bromine is used in quartz—haUde light bulbs. Bromine is used to etch aluminum, copper, and semi-conductors. Bromine and its salts are known to recover gold and other precious metals from their ores. Bromine can be used to desulfurize fine coal (see Coal conversion processes). Table 5 shows estimates of the primary uses of bromine. 

The catalytic activity of doped nickel oxide on the solid state decomposition of CsN3 decreased [714] in the sequence NiO(l% Li) > NiO > NiO(l% Cr) > uncatalyzed reaction. While these results are in qualitative accordance with the assumption that the additive provided electron traps, further observations, showing that ZnO (an rc-type semi-conductor) inhibited the reaction and that CdO (also an rc-type semi-conductor) catalyzed the reaction, were not consistent with this explanation. It was noted, however, that both NiO and CdO could be reduced by the product caesium metal, whereas ZnO is not, and that the reaction with NiO yielded caesium oxide, which is identified as the active catalyst. Detailed kinetic data for these rate processes are not available but the pattern of behaviour described clearly demonstrates that the interface reactions were more complicated than had been anticipated. 

Previous theoretical studies of isolated and doped PA have mostly dealt with geometrical structures and charge and spin wavess. A few have dealt with the vibrational spectrumS2i = using force fields derived from fits to experimental infrared and Raman spectra of smaller polyenes or from scaled force constants obtained from semi-empirical SCF calculations on these systems. Very little the-... 

The fact that pure silicon is not a conductor but is "doped to make it a good semi-conductor might seem odd, particularly since considerable effort goes into obtciining very pure silicon. Nonetheless, the undoped silicon is not conductive. This allows one to form discrete areas of n-type and p-type silicon on the same wafer and to position these in conjunction with each other in a manner so that a current amplifying device results. An example of such a device is shown in the following diagram ... 

In general, the peculiarities of the surface effects in thin semiconductors, for which application of semi-infinite geometry becomes incorrect were examined in numerous papers. As it has been shown in studies [101, 113, 121 - 123] the thickness of semiconductor adsorbent becomes one of important parameters in this case. Thus, in paper [121] the relationship was deduced for the change in conductivity and work function of a thin semiconductor with weakly ionized dopes when the surface charge was available. Paper [122] examined the effect of the charge on the temperature dependence of the work function and conductivity of substantially thin adsorbents. Papers [101, 123] focused on the dependence of the surface conductivity and value of the surface charge as functions of the thickness of semiconductor and value of the surface band bending caused by adsorption and application of external field. 

Now we can easily explain the experimentally observed function s [59]. Partially reduced oxides are usually highly doped semi-... 

Innovatory boronated carbons (manufactured in the Institute of Chemistry and Technology of Petroleum and Coal, Wroclaw University of Technology, Poland) were obtained by co-pyrolysis of coal-tar pitch with a pyridine-borane complex. In the first stage of pyrolysis (520°C) the so-called semi-coke is obtained. Further carbonization at 2500°C leads to obtaining boron-doped carbonaceous material (sample labeled 25B2). 

When both donors and acceptors are present, compensation results, whereby the electrons supplied by the donor are given to the acceptor. Thus, the free carrier concentration can be considerably reduced below that expected from introducing a known donor or acceptor if the opposite type of dopant is unintentional. For example, semi-insulating (SI) InP (used as a substrate for epitaxial growth) can be made by incorporating low levels of Fe3+ as a deep acceptor (reduced to Fe2+) to compensate for unintentional n-type doping in the sample [19]. 

A schematic view of the cold cathode fabrication process is shown in Fig. 10.18. The cold cathode is fabricated by low pressure chemical vapor deposition (LPCVD) of 1.5 pm of non-doped polysilicon on a silicon wafer or a metallized glass substrate. The topmost micrometer of polysilicon is then anodized (10 mA cnT2, 30 s) in ethanoic HF under illumination. This results in a porous layer with inclusions of larger silicon crystallites, due to faster pore formation along grain boundaries. After anodization the porous layer is oxidized (700 °C, 60 min) and a semi-transparent (10 nm) gold film is deposited as a top electrode. 

Finally, in the last section of this chapter (Section 6.6), we will treat two aspects that are of great relevance in the optical spectroscopy of solids. First, we will introduce a semi-empirical method (due to Judd, 1962 Ofelt,1962) that analyzes the absorption spectra of trivalent rare earth ions in crystals to search for new efficient phosphors and solid state lasers. Secondly, we will treat a relatively new topic related to optical centers in solids the optically induced cooling of trivalent ytterbium doped solids. 

The dye sensitised semi-conductor electrode is a transparent conducting sheet of glass coated (5 pm) with nanocrystalline TiOj (diameter 20 nm) doped with a ruthenium bipyridyl complex. The dye absorbs light, becomes excited and injects electrons into the TiOj electrode. The electrons travel into the transparent WO3 hhn and then, to balance the charge, lithium ions from the electrolyte solution insert into the WO3 and in so doing create the coloured species as described above. If the light source is removed then the cell is bleached back to its original colour. However, if the... 

High-purity semi-insulating (SI) SiC material has the highest reported thermal conductivity with a value of 4.9 W/(cm-K). Lower values are measured for the doped crystals but they are all above 4 W/(cm-K) at room temperature [10]. 

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