Select transistor

A CMOS imager consists of a two-dimensional arrangement of photodiodes, each provided with its own selection transistor, as shown in Fig. 7.8.5. For the description of the operation, assume that all photodiodes are precharged to a certain re-... 

Fig. 7.8.5 Photodiode array image sensor with one photodiode and one selection transistor per pixel...

Semiconductor technology will also prove to play an important role in the future of ion-selective electrodes as shown by the first attempts using ion-selective transistor electrodes [441—443]. In this case the metal gate of a MOS-FET unit was replaced with a thin (> 100 ju) ion-selective membrane, contacting the sample solution. With... 

Fig. 65. Ion-selective transistor electrode. Left Circuit Right Calibration curve...

Novel glycerol and formaldehyde selective sensors based on pEI-Sensitive Field Effect Transistors as transducers and Glycerol Dehydrogenase and Formaldehyde Dehydrogenase as biorecognition elements have been developed. The main analytical parameters of the sensors have been investigated and will be discussed. 

Consider, for e.xample, a box of 100 transistors containing five defectives. Suppose tliat a transistor selected at random is to be classified as defective or non-defective. Let X denote die outcome, widi X = 0 associated with die drawing of a non-defective and X = 1 associated with die drawing of a defective. Then X is a discrete random variable with pdf specified by... 

A novel development of the use of ion-selective electrodes is the incorporation of a very thin ion-selective membrane (C) into a modified metal oxide semiconductor field effect transistor (A) which is encased in a non-conducting shield (B) (Fig. 15.4). When the membrane is placed in contact with a test solution containing an appropriate ion, a potential is developed, and this potential affects the current flowing through the transistor between terminals Tt and T2. 

The immense growth in the luminescence literature during the period between these two reviews had little to do with developments in fundamental theory. It was mainly due to the availability of new instrumentation, such as the photomultiplier (around 1950), the laser (around 1960), transistor and microcircuit electronics (around 1970), and ready access to laboratory computers (around 1975). All aspects of luminescence theory now being used to interpret luminescence measurements have been known since the early 1900 s and nearly all of the types of measurements now being made had been initiated with cruder techniques by 1930. We discuss here many of the latest techniques in luminescence analysis with selected highlights from the historical development of luminescence and a look at several recent developments in luminescence applications that appear likely to be important to future research. 

The ISFET is an electrochemical sensor based on a modification of the metal oxide semiconductor field effect transistor (MOSFET). The metal gate of the MOSFET is replaced by a reference electrode and the gate insulator is exposed to the analyte solution or is coated with an ion-selective membrane as illustrated in Fig. 

ISFET Ion-selective field effect transistor LIBS Laser-induced breakdown... 

Kolesar ES, Wiseman JM. 1989. Interdigitated gate electrode field effect transistor for the selective detection of nitrogen dioxide and diisopropyl methylphosphonate. Anal Chem 61(21) 2355. 

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