Secondary ion mass spectrometry depth profiles

The surface of the particles can be studied directly by the use of electron microprobe X-ray emission spectrometry (EMP), electron spectroscopy for chemical analysis (ESCA), Auger electron spectroscopy (AES), and secondary ion-mass spectrometry. Depth-profile analysis determines the variation of chemical composition below the original surface. 

Lin, R., Wee, A.T.S. (2004) Sub-keV secondary ion mass spectrometry depth profiling comparison of sample rotation and oxygen flooding. Applied Surface Science, 231-232,653-657. 

The O self-diffusion behavior in deformed sapphire single crystals containing a high density of unidirectional basal dislocations was examined at 1424 to 1636C using 1 0 isotopes and secondary ion mass spectrometry depth profiling. The pipe and lattice diffusion kinetics were best described by ... 

Loesing R, Guryanov GM, Hunter JL, Griffis DP (2000) Secondary ion mass spectrometry depth profiling of ultrashallow phosphorous in silicon. J Vac Sci Technol B 18 509-513. doi 10.1116/1.591222... 

Secondary ion mass spectrometry (SIMS) is by far the most sensitive surface teclmique, but also the most difficult one to quantify. SIMS is very popular in materials research for making concentration depth profiles and chemical maps of the surface. For a more extensive treatment of SIMS the reader is referred to [3] and [14. 15 and 16]. The principle of SIMS is conceptually simple When a surface is exposed to a beam of ions... 

Wilson, R.G., Stevie, F.A., and Magee, C.W., Secondary Ion Mass Spectrometry A Practical Handbook for Depth Profiling and Bulk Impurity Analysis, Wiley, Chichester, U.K., 1989. 

Sputtered Neutral Mass Spectrometry (SNMS) is the mass spectrometric analysis of sputtered atoms ejected from a solid surface by energetic ion bombardment. The sputtered atoms are ionized for mass spectrometric analysis by a mechanism separate from the sputtering atomization. As such, SNMS is complementary to Secondary Ion Mass Spectrometry (SIMS), which is the mass spectrometric analysis of sputtered ions, as distinct from sputtered atoms. The forte of SNMS analysis, compared to SIMS, is the accurate measurement of concentration depth profiles through chemically complex thin-film structures, including interfaces, with excellent depth resolution and to trace concentration levels. Genetically both SALI and GDMS are specific examples of SNMS. In this article we concentrate on post ionization only by electron impact. 

Secondary ion mass spectrometry (SIMS) is a widespread analytical technique for the study of surfaces in materials science. Mostly used for elemental analyses and depth profiling, it is particularly relevant for many different fields of research including cultural heritage studies. Reviews of its use for the study of ancient glasses or metal artefacts already exist in the literature [Spoto 2000, Darque-Ceretti and Aucouturier 2004, Dowsett and Adriaens 2004, Adriens and Dowsett 2006, Anderle et al. 2006, McPhail 2006], but as only elemental information is obtained, these studies are limited to inorganic materials. 

In related experiments by Johnson (1985), atomic deuterium was used instead of Hx to neutralize boron in Si. Similar results on spreading resistance were obtained. Furthermore, the distribution profile of D was measured by secondary-ion mass spectrometry (SIMS), as shown in Fig. 4. The distribution profile of D reveals 1) that the penetration depth of D is in good agreement with the resistivity profile and 2) that the D concentration matches the B concentration over most of the compensated region. In another sample, the B was implanted at 200 keV with a dose of 1 x 1014 cm-2, the damage was removed by rapid thermal anneal at 1100°C for 10 sec., and then D was introduced at 150°C for 30 min. As shown in Fig. 5, it is remarkable that the D profile conforms to the B profile. 

The elemental composition, oxidation state, and coordination environment of species on surfaces can be determined by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) techniques. Both techniques have a penetration depth of 5-20 atomic layers. Especially XPS is commonly used in characterization of electrocatalysts. One common example is the identification and quantification of surface functional groups such as nitrogen species found on carbon-based catalysts.26-29 Secondary Ion Mass spectrometry (SIMS) and Ion Scattering Spectroscopy are alternatives which are more surface sensitive. They can provide information about the surface composition as well as the chemical bonding information from molecular clusters and have been used in characterization of cathode electrodes.30,31 They can also be used for depth profiling purposes. The quantification of the information, however, is rather difficult.32... 

Secondary ion mass spectrometry (SIMS) was used to characterise the coatings for their Ti, Ru and O stoichiometry on the surface and as a function of depth into the coating. A PHI 6650 Quadrupole mass spectrometer, with Cs+ as the ion source was used in these studies. The conversion of the measured secondary ion counts to concentration was performed using relative sensitivity factors, which were first determined with a standard sample containing known amounts of RuC>2 and TiC>2. All of the SIMS profiles were repeated several times, to determine the measurement precision, which was typically +10%. 

Linnarson, M. K., A. Hallen, and B. G. Svensson, Depth Profiling of Ion- Implanted SiC, Proceedings of the 12th Inti. Conference on Secondary Ion Mass Spectrometry, Brussels, Belgium, September 5-11, 1999, pp. 643-646. 

The sum of these observations suggests that metal phosphate crystalline mineral phases, some of which are solid solutions, are present in the samples. These phases may be discrete or surface precipitates. Some work on scmbber residues using depth profiling techniques with secondary ion mass spectrometry (SIMS) suggest that surface... 

Secondary ion mass spectrometry (SIMS) and sputtered neutral mass spectrometry (SNMS) are today the most important mass spectrometric techniques for surface analysis, especially for thin layer analysis, for depth profiling, for the determination of contaminations and element distribution on a solid sample surface. 

There are several methods available to probe the actual interphase to demonstrate the existence of interpenetrating networks directly. Among these techniques are depth profiling by SIMS (secondary ion mass spectrometry) or SNMS (sputtered neutral mass spectrometry), and the use of X-ray photoelectron spectroscopy (XPS) depth profiling or Auger electron spectroscopy (AES) depth profiling. 

While a number of techniques like ion scattering and depth profiling via secondary ion mass spectrometry, Auger electron spectroscopy or X-ray photoelectron spectroscopy can be used to... 

Secondary ion mass spectrometry is based on surface bombardment by argon ions in UHV, followed by mass spectrometry of the charged species which are sputtered from the sample s surface. It provides specific information on surface species, high spatial resolution and depth profiling [64], The SIMS requires an... 

---