Semiconductors, sandwich

Gate oxide dielectrics are a cmcial element in the down-scaling of n- and -channel metal-oxide semiconductor field-effect transistors (MOSEETs) in CMOS technology. Ultrathin dielectric films are required, and the 12.0-nm thick layers are expected to shrink to 6.0 nm by the year 2000 (2). Gate dielectrics have been made by growing thermal oxides, whereas development has turned to the use of oxide/nitride/oxide (ONO) sandwich stmctures, or to oxynitrides, SiO N. Oxynitrides are formed by growing thermal oxides in the presence of a nitrogen source such as ammonia or nitrous oxide, N2O. Oxidation and nitridation are also performed in rapid thermal processors (RTP), which reduce the temperature exposure of a substrate. 

Four different types of junctions can be used to separate the charge carriers in solar cebs (/) a homojunction joins semiconductor materials of the same substance, eg, the homojunction of a p—n sibcon solar ceb separates two oppositely doped layers of sibcon 2) a heterojunction is formed between two dissimbar semiconductor substances, eg, copper sulfide, Cu S, and cadmium sulfide, CdS, in Cu S—CdS solar cebs (J) a Schottky junction is formed when a metal and semiconductor material are joined and (4) in a metal—insulator—semiconductor junction (MIS), a thin insulator layer, generaby less than 0.003-p.m thick, is sandwiched between a metal and semiconductor material. 

The creation of nanoscale sandwiches of compound semiconductor heterostructures, with gradients of chemical composition that are precisely sculpted, could produce quantum wells with appropriate properties. One can eventually think of a combined device that incorporates logic, storage, and communication for computing—based on a combination of electronic, spintronic, photonic, and optical technologies. Precise production and integrated use of many different materials will be a hallmark of future advanced device technology. 

The detector in a spectrometer must produce a signal related to the intensity of the radiation falling on it. For instruments operating in the visible region a photovoltaic or barrier-layer cell is the simplest and cheapest available. Current produced when radiation falls on a layer of a semiconductor material, e.g. selenium, sandwiched between two metallic electrodes, is proportional to the power of the incident radiation and can be monitored by a galvanometer. Barrier layer cells are robust and are often used in portable instruments but they are not very sensitive and tend to be unstable during extended use. 

Coordination compounds composed of tetrapyrrole macrocyclic ligands encompassing a large metal ion in a sandwich-like fashion have been known since 1936 when Linstead and co-workers (67) reported the first synthesis of Sn(IV) bis(phthalocyanine). Numerous homoleptic and heteroleptic sandwich-type or double-decker metal complexes with phthalocyanines (68-70) and porphyrins (71-75) have been studied and structurally characterized. The electrochromic properties of the lanthanide pc sandwich complexes (76) have been investigated and the stable radical bis(phthalocyaninato)lutetium has been found to be the first example of an intrinsic molecular semiconductor (77). In contrast to the wealth of literature describing porphyrin and pc sandwich complexes, re-... 

Poly( -phenylene vinylene) (PPV) was the first reported (1990) polymer to exhibit electroluminescence. PPV is employed as a semiconductor layer. As noted earlier, the layer was sandwiched between a hole-injecting electrode and electron-injecting metal on the other. PPV has an energy gap of about 2.5 eV and thus produces a yellow-green luminescence. Today, other materials are available, which give a variety of colors. 

Fig. 7.2 Sandwich (or stacked) configurations placed in an electrolyte solution (a) p-n type, (b) semiconductor-metal type photochemical diodes. Both p-type and n-type semiconductors are provided with ohmic contacts. In p-n type light is incident from both directions and ohmic contacts are connected through metal contacts.

Van Mensfoort SLM, Coehoom R (2008) Effect of Gaussian disorder on the voltage dependence of the current density in sandwich-type devices based on organic semiconductors. Phys Rev B 78 085207... 

The TOP principle is based on generating a thin sheet of electron-hole pairs near the surface of the sample—usually a high-resistivity semiconductor with negligible thermal equihbrium-carrier concentration, sandwiched between two electrodes, one of which is semitransparent, as shown in Fig. 4.1. 

Formation of composite and sandwich-type semiconductors constitutes an interesting development (Fig. 100) [576,605-609]. A composite semiconductor, like a cherry and its stone, contains one material as its core and a second material as its shell. CdS particles coated by Cd(OH)2, CdSe coated by ZnS, and HgS coated by CdS are examples of recently prepared composite semiconductors... 

A series of LEDs with different active-layer thicknesses was grown by low-pressure MOCVD, with the structure given in the schematic in Fig. 6. The LEDs used were double-heterostructure, edge-emitting devices wherein p-type and n-type semiconductors sandwich an undoped, low-band-gap energy semiconductor (active layer). The p-n junction double-heterostructure is more efficient at trapping electrons and holes within the active layer for recombination, enhancing EL efficiency. 

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