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S-H-process

S-H process (inventor Schnurr) continuous nitration of hexamethylenetetramine using highly concentrated nitric acid, accompanied by a decomposition reaction under liberation of nitrous gases, without destruction of the Cyclonite formed. The reaction mixture is then filtered to separate the product from the waste acid, followed by stabilization of the product by boiling under pressure and, if required, recrystallization. [Pg.121]

Hutmacher, D. W. Zein, I. Teoh, S. H. Processing and. Fabrication oi Advanced Materials VIII, Proceedings of a Symposium, Singapore, 2000, 201-206. [Pg.98]

Mah, R. S. H., Chemical Process Structures and Information Flows, Butterworth, Reading, Mass., 1990. [Pg.127]

This completes the heuristic derivation of the Boltzmann transport equation. Now we trim to Boltzmaim s argument that his equation implies the Clausius fonn of the second law of thennodynamics, namely, that the entropy of an isolated system will increase as the result of any irreversible process taking place in the system. This result is referred to as Boltzmann s H-theorem. [Pg.683]

The light emitted in the spontaneous recombination process can leave tire semiconductor, be absorbed or cause additional transitions by stimulating electrons in tire CB to make a transition to tire VB. In tliis stimulated recombination process anotlier photon is emitted. The rate of stimulated emission is governed by a detailed balance between absorjDtion, and spontaneous and stimulated emission rates. Stimulated emission occurs when tire probability of a photon causing a transition of an electron from tire CB to VB witli tire emission of anotlier photon is greater tlian that for tire upward transition of an electron from tire VB to tire CB upon absorjDtion of tire photon. These rates are commonly described in tenns of Einstein s H and 5 coefficients [8, 43]. For semiconductors, tliere is a simple condition describing tire carrier density necessary for stimulated emission, or lasing. This carrier density is known as... [Pg.2894]

Similar to IFP s Dimersol process, the Alphabutol process uses a Ziegler-Natta type soluble catalyst based on a titanium complex, with triethyl aluminum as a co-catalyst. This soluble catalyst system avoids the isomerization of 1-butene to 2-butene and thus eliminates the need for removing the isomers from the 1-butene. The process is composed of four sections reaction, co-catalyst injection, catalyst removal, and distillation. Reaction takes place at 50—55°C and 2.4—2.8 MPa (350—400 psig) for 5—6 h. The catalyst is continuously fed to the reactor ethylene conversion is about 80—85% per pass with a selectivity to 1-butene of 93%. The catalyst is removed by vaporizing Hquid withdrawn from the reactor in two steps classical exchanger and thin-film evaporator. The purity of the butene produced with this technology is 99.90%. IFP has Hcensed this technology in areas where there is no local supply of 1-butene from other sources, such as Saudi Arabia and the Far East. [Pg.440]

Rosenberg, J., R.S.H. Mah, and C. lordache, Evaluation of Schemes for Detecting and Identifying Gross Errors in Process Data, Indushial and Engineeiing Chemistiy, Reseaieh, 26(.3), 1987, 555-564. (Simulation studies of various detection methods)... [Pg.2545]

K. C. Hickman, S. M. Caspar, S. S. H. Naqvi, K. P. Bishop, J. R, McNeil, G. D. Tipton, B. R, Stallard, and B. L. Draper. Use of Diffraction From Latent Images to Improve Lithogrophy Control. Presented at the SPIE Technical Conference 1464 Symposium on I.C. Metrology, Inspection, and Process Control, San Jose, CA, 1991, Proc. SPIE. 1464, pp. 245-257, 1991. Another application is presented of scattering characterization and modeling from periodic structures for process control. [Pg.722]

Schwartz, S.S. and Goodman, S.H. Plastics Materials and Processes, Van Nostrand Reinhold, New York (1982)... [Pg.40]

If AG is equal to 0, the process is at equilibrium, and there is no net flow either in the forward or reverse direction. When AG = 0, A.S = H/T, and the enthalpic and entropic changes are exactly balanced. Any process with a nonzero AG proceeds spontaneously to a final state of lower free energy. If AG is negative, the process proceeds spontaneously in the direction written. If AG is positive, the reaction or process proceeds spontaneously in the reverse direction. (The sign and value of AG do not allow us to determine how fast the process will go.) If the process has a negative AG, it is said to be exergonic, whereas processes with positive AG values are endergonic. [Pg.62]

V. L. McGuffin, C. E. Evans and S. H. Chen, Ditect examination of separation processes in liquid-cliromatography effect of temperature and pressure on solute retention , 7. Microcolumn Sep. 5 3-10 (1993). [Pg.168]

Plating bath Anodes Corrosion process Current Potential density (V) (A/m ) (vj.S.H.E.) ... [Pg.350]

Key Terms enthalpy, H free energy of formation, AG standard entropy change, AS° entropy, S spontaneous process standard free energy change, AG° free energy, G... [Pg.472]

This is in accord with Le Chatelier s Principle. Addition of HC1 to water raises [H+]. By Le Chatelier s Principle, processes take place that tend to counteract partially the imposed change. Reaction with OH (aq) does tend to counteract the raised concentration of H+(aq). [Pg.188]

Tinney, W. S., H. J. Knoll and C. LI. Diehl, Loop Extends Mechanical Seal Life, Hydrocarbon Processing Jan. 1973, p. 123. [Pg.222]

In Chapter 1 we described the fundamental thermodynamic properties internal energy U and entropy S. They are the subjects of the First and Second Laws of Thermodynamics. These laws not only provide the mathematical relationships we need to calculate changes in U, S, H,A, and G, but also allow us to predict spontaneity and the point of equilibrium in a chemical process. The mathematical relationships provided by the laws are numerous, and we want to move ahead now to develop these equations.1... [Pg.37]

These equations can be used to derive the four fundamental equations of Gibbs and then the 50,000,000 equations alluded to in Chapter 1 that relate p, T, V, U, S, H, A, and G. We should keep in mind that these equations apply to a reversible process involving pressure-volume work only. This limitation does not restrict their usefulness, however. Since all of the thermodynamic variables are state functions, calculation of AZ (Z is any of these variables) by a reversible path between two states gives the same value as would be obtained for all other paths between those states. When other forms of work are involved, additions can be made to the equations to account for the additional work. The... [Pg.105]

Quantities like V, U, S, H< A, and G are properties of the system. That is, once the state of a system is defined, their values are fixed. Such quantities are called state functions. If we let Z represent any of these functions, then it does not matter how we arrive at a given state of the system, Z has the same value. If we designate Z to be the value of Z at some state l, and Z to be the value of Z at another state 2, the difference AZ = Z2 - Z in going from state l to state 2 is the same, no matter what process we take to get from one state to the other. Thus, if we go from state l through a series of intermediate steps, for which the changes in Z are given by AZ, AZ . AZ,-. and eventually end up in state 2,... [Pg.599]

Report 46 Quality Today in Polymer Processing, S.H. Coulson, J.A. Cousans, Exxon Chemical International Marketing. [Pg.131]

Li, S. H. and Miller, R., Chemical Mechanical Polishing in Silicon Processing, Semiconductor Semimet., Vol. 63, New York Academic Press, 2000. [Pg.266]


See other pages where S-H-process is mentioned: [Pg.300]    [Pg.434]    [Pg.300]    [Pg.434]    [Pg.17]    [Pg.439]    [Pg.172]    [Pg.87]    [Pg.484]    [Pg.461]    [Pg.432]    [Pg.511]    [Pg.97]    [Pg.1104]    [Pg.1105]    [Pg.1106]    [Pg.1740]    [Pg.2545]    [Pg.2545]    [Pg.2572]    [Pg.2576]    [Pg.1004]    [Pg.837]    [Pg.544]    [Pg.1011]    [Pg.181]    [Pg.344]   
See also in sourсe #XX -- [ Pg.68 ]




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