Redox potential semiconductor-solution interface

Figure 29.4 shows an example, the energy diagram of a cell where n-type cadmium sulfide CdS is used as a photoanode, a metal that is corrosion resistant and catalytically active is used as the (dark) cathode, and an alkaline solution with S and S2 ions between which the redox equilibrium S + 2e 2S exists is used as the electrolyte. In this system, equilibrium is practically established, not only at the metal-solution interface but also at the semiconductor-solution interface. Hence, in the dark, the electrochemical potentials of the electrons in all three phases are identical. 

The electrochemical potential of the solution and semiconductor, see Fig. 3.6, are determined hy the standard redox potential of the electrolyte solution (or its equivalent the standard redox Fermi level, Ep,redo, and the semiconductor Fermi energy level. If these two levels do not lie at the same energy then movement of charge across the semiconductor - solution interface continues until the two phases equilibrate with a corresponding energy band bending, see Fig. 3.8. 

At a semiconductor/solution interface, an n-type semiconductor (carrier density of 10 electrons cm A is in contact with a nonaqueous system using a redox system, i.e., no surface states. The capacity of this interface is 4 pF cm-2. Evaluate the potential differences within the semiconductor. (Bockris)... 

The driving force of the electron transfer process in the interface is the difference of energy between the levels of the semiconductor and the redox potential of the species close to the particle surface. The thermodynamically possible processes occurring in the interface are represented in Fig. 9 the photogenerated holes give rise to the D -> D + oxidative reaction while the electrons of the conduction band lead to the A -> A reductive process. The most common semiconductors present oxidative valence bands (redox potentials from +1 to + 3.5 V) and moderately reductive conduction bands (+ 0.5 to - 1.5 V) [115]. Thus, in the presence of redox species close or adsorbed to the semiconductor particle and under illumination, simultaneous oxidation and reduction reactions can take place in the semiconductor-solution interface. 

Semiconductor - Electrolyte Interlace The electric field in the space charge region that may develop at the semiconductor electrolyte interface can help to separate photogenerated e /h 1 couples, effectively suppressing recombination. When a semiconductor is brought into contact with an electrolyte, the electrochemical potential of the semiconductor (corresponding to the Fermi level, Ey of the solid [50]) and of the redox couple (A/A ) in solution equilibrate. When an n-type semiconductor is considered, before contact the Ey of the solid is in the band gap, near the conduction band edge. After contact and equilibration the Ey will... 

Similar photovoltaic cells can be made of semiconductor/liquid junctions. For example, the system could consist of an n-type semiconductor and an inert metal counterelectrode, in contact with an electrolyte solution containing a suitable reversible redox couple. At equilibrium, the electrochemical potential of the redox system in solution is aligned with the Fermi level of the semiconductor. Upon light excitation, the generated holes move toward the Si surface and are consumed for the oxidation of the red species. The charge transfer at the Si/electrolyte interface should account for the width of occupied states in the semiconductor and the range of the energy states in the redox system as represented in Fig. 1. 

Electron transfer is a fast reaction ( 10-12s) and obeys the Franck-Condon Principle of energy conservation. To describe the transfer of electron between an electrolyte in solution and a semiconductor electrode, the energy levels of both the systems at electrode-electrolyte interface must be described in terms of a common energy scale. The absolute scale of redox potential is defined with reference to free electron in vacuum where E=0. The energy levels of an electron donor and an electron acceptor are directly related to the gas phase electronic work function of the donor and to the electron affinity of the acceptor respectively. In solution, the energetics of donor-acceptor property can be described as in Figure 9.6. 

The band bending at the semiconductor/liquid (electrolyte solution) interface can be understood by considering the potential distribution at this interface. In a case where the electrolyte solution contains a redox couple (R/Ox), which causes an electrochemical redox reaction,... 

As = surface area of a semiconductor contact [A ] = concentration of the reduced form of a redox couple in solution [A] = concentration of the oxidized form of a redox couple in solution A" = effective Richardson constant (A/A ) = electrochemical potential of a solution cb = energy of the conduction band edge Ep = Fermi level EF,m = Fermi level of a metal f,sc = Fermi level of a semiconductor SjA/A") = redox potential of a solution ° (A/A ) = formal redox potential of a solution = electric field max = maximum electric field at a semiconductor interface e = number of electrons transferred per molecule oxidized or reduced F = Faraday constant / = current /o = exchange current k = Boltzmann constant = intrinsic rate constant for electron transfer at a semiconductor/liquid interface k = forward electron transfer rate constant = reverse electron transfer rate constant = concentration of donor atoms in an n-type semiconductor NHE = normal hydrogen electrode n = electron concentration b = electron concentration in the bulk of a semiconductor ... 

FIGURE 1.2. Representation of the formation of a semiconductor/electrolyte interface in the dark (a) before the contact (b) after the contact and eiectrostatic equilibration when the Fermi level in the semiconductor and the redox potential of the solution become equal. 

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