Quartz, substrate-based fabrication

Very recently, new materials and fabrication procedures have been explored in order to overcome a number of disadvantages associated with glass and quartz substrates. One of these new approaches is based on casting of the micro-... 

In recent years, self-assembly was successfully applied in micrometer-scale structures. Self-assembled monolayer (SAM) [11] is the representative example of self-assembly microfabrication, in which stufaces consist of a single layer of molecules on a substrate. SAMs can be prepared simply by adding a solution of the desired molecule onto the substrate surface and washing off the excess. The technique was utilized on the metal substrates with PDMS stamps to form the combined system for controlling of crystal nucleation [12]. Another example involves a fluidic technique based on patterned hydrophobic SAMs and capillary forces to self-assemble micro-fabricated sihcon blocks onto silicon and quartz substrates [13]. 

UV-EL diodes were fabricated based on a Al/polysilane/ITO/glass structure.36 Glass or quartz plates coated with indium-tin-oxide (ITO) were used as substrates. The EL diodes operate at room temperature.36 A typical representation of the structure is shown in Figure 26.93 The device comprises a heterojunction forming a Schottky diode, with the polysilane film being the p-type layer, the ITO acting as an ohmic contact, and the A1 being the Schottky... 

The typical polymer LED structure is shown in Figure 7.3. In order to fit in the quartz finger dewar which is inserted in the microwave cavity (see Section 1.3.1 below), the width of the devices was limited to 4.5 mm. They were all fabricated on ITO-coated glass, which was the positive electrode. The active area of the devices was 7 mm. PPV layers were deposited by spin coating the appropriate precursor and thermally converting it CN-PPV was spin-cast directly from solution [3]. The deposition of the polymers was followed by evaporation of the metal electrode from which electrons were injected into the devices [3,9,25,26,28,29]. In the case of the PPV- and PPE-based devices, that electrode was Al-encapsulated Ca, which yielded a higher device efficiency than an A1 electrode [9,25,26,28,29]. The thickness of the emissive PPV and PPE layers was 600 and 300 nm, respectively. Derivatives of PPE dissolved in toluene were spin-coated onto the ITO substrates, followed by e-beam or thcnnal evaporation of A1 or Ca/Al electrodes in a base chamber pressure of 10 torr. The PPV/CN-PPV diodes used A1 as the electron-injecting electrode [3], The thickness of the PPV layer was 120 nm, and that of the CN-PPV layer was 100-200 nm. Finally, copper wires were bonded to the A1 and no layers with silver paint. 

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