Photoresists resins

A transparent electrode substrate was prepared by coating indium tin oxide (ITO) on a glass substrate and washing the substrate. ITO was then patterned using a photoresist resin and an etchant to specified patterns and the substrate washed. A hole injection layer was formed by coating a selected experimental agent dissolved in toluene to a thickness of about 50 nm and baking at 110°C for 1 hour. 

In addition to using imaging as a technique to obtain spatially and temporally patterned chemical data from a sample, one can also pattern chemical reactions in space and time using similar methods. Figure 2.18 demonstrates an example in which multiphoton scanning with ultrafast laser pulses was used to polymerize a photoresist resin with about 120 nm spatial resolution in three dimensions. 

Positive tone photoresist resins activated below 200 nm were prepared by Inoue [3] by copolymerizing polycyclic monomers, (Xlll) and (XIV), with t-butyl-trifluoromethyl acrylate, (XV). 

Preparation of Diamantyl-Containing Positive Photoresist Resin... 

Choi [3] prepared photoresist resins useful at 157 and 193 nm containing polyhedral silsesquioxane substituents as illustrated (Vll) below. 

Such attractive interactions can be particularly important in situations where the presence of even a few extraneous particles on a surface can be highly detrimental, as in the production of microchips for the electronics industry (Fig. 13.3). The presence of a single dust particle on the surface of a silicon wafer before coating with the photoresist resin that will be used to engrave the final circuit will, in aU probability, result in a defective product in that area. When one considers that modern chips may have circuit line spacings of less than 10 cm, a particle of that diameter or even smaller will represent a veritable monkey wrench in the works. For that reason, extreme measures must be taken to ensure that aerosol particles are absent (to the extent technologically possible) in production areas. 

Powder metal binder Light crosslinkable photoresist resins... 

Water-soluble paint resins Photoresist resins Diamine crosslinker for corrosion-resistant coatings Flexible printed electronic circuit board resins Amide derivatives for dry film negative photoresists Self-polishing shoe polish resins... 

Imide derivatives for heat-resistant circuit boards Unsaturated derivatives for thermosetting resins Amine modified copolymer for photoresist resins Electrophoretic resins Epoxy crosMinker for coatings... 

Photoresist resins Methyl vinyl United States 3,792,025 1974 Organic Chemistry Upjohn... 

Photocrosslinkable resins—photographic films Photoresist resins Photoconductive recording sheet interlayer Hair spray resins Antihalation layer—photographic films... 

Figure 19 Other photoresist resins, in addition to the original PBOCST resists, that were developed which also function based on deprotection reactions involving the t-boc group.

Figure 26 Representative structures of second-generation 193-nm photoresist resins that incorporated large alicyclic ring structures to improve the plasma etch resistance of polyacrylate resists.

Examples of low molecular weight, negative tone molecular glass photoresist resins that have been investigated and which function based on cationic polymerization of epoxide groups. 

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