Photoluminescence semiconductors

The ternary alloys of both systems are very interesting and promising photoelectric and photoluminescent semiconductors. 

Band gaps in semiconductors can be investigated by other optical methods, such as photoluminescence, cathodoluminescence, photoluminescence excitation spectroscopy, absorption, spectral ellipsometry, photocurrent spectroscopy, and resonant Raman spectroscopy. Photoluminescence and cathodoluminescence involve an emission process and hence can be used to evaluate only features near the fundamental band gap. The other methods are related to the absorption process or its derivative (resonant Raman scattering). Most of these methods require cryogenic temperatures. 

For applied work, an optical characterization technique should be as simple, rapid, and informative as possible. Other valuable aspects are the ability to perform measurements in a contactless manner at (or even above) room temperature. Modulation Spectroscopy is one of the most usehil techniques for studying the optical proponents of the bulk (semiconductors or metals) and surface (semiconductors) of technologically important materials. It is relatively simple, inexpensive, compact, and easy to use. Although photoluminescence is the most widely used technique for characterizing bulk and thin-film semiconductors. Modulation Spectroscopy is gainii in popularity as new applications are found and the database is increased. There are about 100 laboratories (university, industry, and government) around the world that use Modulation Spectroscopy for semiconductor characterization. 

PBE dendrons coordinate to the surface of II-VI semiconductor nanocrystals (e.g., CdSe [33] and CdSe/ZnS core/shell structure [34, 35]) to modulate the photoluminescence of the nanocrystals [32]. Trioctylphosphine oxide (TOPO)-capped II-VI semiconductor nanocrystals of several-nanometers diameter have been synthesized by a pyrolysis reaction of organometallics in TOPO [33-35]. The capping ligand (TOPO) can be replaced by stronger ligands such as thiol compounds [36], suggesting that dendrons bearing sulfur atom(s) at the focal point replace TOPO as well. 

Ouyang J, Pan ERE, Bard AJ (1989) Semiconductor Electrodes, 62. Photoluminescence and electroluminescence from manganese-doped ZnS and CVD ZnS electrodes. J Electrochem Soc136 1033-1039... 

Ito, Y, Matsuda, K. and Kanemitsu, Y. (2007) Mechanism of photoluminescence enhancement in single semiconductor nanocrystals on metal surfaces. Phys. Rev. B, 75, 033309. 

Mg2+ ion. 49 has been used to deposit MgO by atomic layer epitaxy,222 and is commonly employed as a />-type dopant for semiconductors, particularly GaAs,223 GaN,224,225 and AlGaN.226 In GaN, Mg doping induces a blue 2.8 eV photoluminescence band arising from donor-acceptor (D-A) pair recombination.227 It is likely that isolated Mg... 

The photoluminescence of these nanoparticles has very different causes, depending on the type of nanomaterial semiconductor QDs luminescence by recombination of excitons, rare-earth doped nanoparticles photoluminescence by atom orbital (AO) transitions within the rare-earth ions acting as luminescent centers, and metallic nanoparticles emit light by various mechanisms. Consequently, the optical properties of luminescent nanoparticles can be very different, depending on the material they consist of. 

A. Othonos and C. Christofides, Photoluminescence and Raman Scattering of Ion Implanted Semiconductors. Influence of Annealing... 

Nickel AML, Seker E, Ziemer BP, Ellis AB. Imprinted poly (acrylic acid) films on cadmium selenide. A composite sensor structure that couples selective amine binding with semiconductor substrate photoluminescence. Chem Mater 2001 13 1391-1397. 

Fauchet PM (1998) Porous silicon photoluminescence and electroluminescent devices. In Semiconductors and semimetals, vol 49. Academic, San Diego, pp 206-252... 

Starodub NF, Fedorenko LL, Starodub VM et al (1996) Extinguishing of visible photoluminescence of porous silicon - stimulated by antigen-antibody immunocomplecx formation. In Optical organic and semiconductor inorganic materials, Riga, Latvia, pp 73-76, 26-29 Aug 1996... 

Electroluminescence. In Section 6.3.2.5, we saw that some materials—in particular, semiconductors—can reemit radiation after the absorption of light in a process called photoluminescence. A related type of emission process, which is common in polymer-based semiconductors, called electroluminescence, results when the electronic excitation necessary for emission is brought about by the application of an electric field rather than by incident photons. The electric field injects electrons into the conduction band, and holes into the valence band, which upon recombination emit light. 

An important aspect of semiconductor films in general with regard to electronic properties is the effect of intrabandgap states, and particularly surface states, on these properties. Surface states are electronic states in the forbidden gap that exist because the perfect periodicity of the semiconductor crystal, on which band theory is based, is broken at the surface. Change of chemistry due to bonding of various adsorbates at the surface is often an important factor in this respect. For CD semiconductor films, which are usually nanocrystalline, the surface-to-volume ratio may be very high (several tens of percent of all the atoms may be situated at the surface for 5 mn crystals), and the effects of such surface states are expected to be particularly high. Some aspects of surface states probed by photoluminescence studies are discussed in the previous section. 

Semiconductor band-gap luminescence results from excited electrons recombining with electron vacancies, holes, across the band gap of the semiconductor material. Electrons can be excited across the band gap of a semiconductor by absorption of light, as in photoluminescence (PL), or injected by electrical bias, as in electroluminescence (EL). Both types of luminescence have been used in chemical sensing applications [1,3]. 

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