Inorganic materials semiconductors

Polysilanes Porous Inorganic Materials Semiconductor Nanocrystal Quantum Dots Short-lived Intermediates Silicon Inorganic Chemistry. 

Quantum dots are the engineered counterparts to inorganic materials such as groups IV, III-V and II-VI semiconductors. These structures are prepared by complex techniques such as molecular beam epitaxy (MBE), lithography or self-assembly, much more complex than the conventional chemical synthesis. Quantum dots are usually termed artificial atoms (OD) with dimensions larger than 20-30 nm, limited by the preparation techniques. Quantum confinement, single electron transport. Coulomb blockade and related quantum effects are revealed with these OD structures (Smith, 1996). 2D arrays of such OD artificial atoms can be achieved leading to artificial periodic structures. 

Meanwhile there is overwhelming evidence that the basic assumptions of the SSH model are not applicable to 7i-bonded conjugated polymers. Coulombic and electron-electron correlation effects are large while electron-phonon coupling is moderately weak. As a consequence, the spectroscopic features in this class of materials are characteristic of molecular rather than of inorganic crystalline semiconductor systems. There are a number of key experimental and theoretical results that support this assignment ... 

Using ion beam technologies denoted in Section 27.3, research and development of advanced materials and devices have been made for their space, nuclear, and industrial applications. As typical examples of such researches, evaluation and development of semiconductor devices for space application, characterization of radiation degradation of nuclear materials, beam analysis and modification of inorganic materials, and beam processing of organic materials are described in this section. 

Starodub NF, Fedorenko LL, Starodub VM et al (1996) Extinguishing of visible photoluminescence of porous silicon - stimulated by antigen-antibody immunocomplecx formation. In Optical organic and semiconductor inorganic materials, Riga, Latvia, pp 73-76, 26-29 Aug 1996... 

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