Semiconductors, single

N. Miyazaki, S. Okuyama. Development of finite element computer program for dislocation density analysis of bulk semiconductor single crystals during Czochralski growth. J Cryst Growth 183 S, 1998. 

Detector Type U, Th, Pa, Ra Semiconductor Single ion counter Multiple-Faraday + single or multiple-ion counters Single ion counter Multiple-Faraday + single or multiple-ion counters Single ion counter Multiple-Faraday + single or multiple-ion counters Multiple-Faraday + single ion counter... 

J. E. Peters and P. D. Ownby. Far Infrared Transmission of Diamond Structure Semiconductor Single Crystals-Silicon and Germanium , Optical Engineering, Vol. 38, No. 11, pp. 1924-1931, November 1999. 

Such bipolar photoelectrochemical behavior is not cotmnonplace. It has been observed under certain conditions for nanocrystalline CdSe films [319]. Behavior of the sort shown in Figure 35b represents another type of APE (Section 1.6.3) and underlines the fact that the photoelectrochemical behavior of these types of films is dictated by dilferential electron and hole transfer kinetics rather than by factors related to band-bending as in semiconductor single crystals. 

Grade Technical, CP, USS, FCC, 99.5%, fused, low boron, rubber, semiconductor, single crystals. 

Crystal growth is not only a physical process that is interesting to science, but also a technologically important subject in the chemical and materials industry. Crystals, especially semiconductor single crystals, are... 

X-rays are absorbed by a diode made from a semiconductor single crystal of silicon or germanium doped with lithium. The X photons produce electrons that induce electronic transitions in the valence and conduction bands of the silicon atoms. 

Table 2.5. Binary semiconductor/metal systems observed to exhibit solid-state amorphization by interdifiiision reactions. Type of experiment, typical reaction temperature (rR), maximum thickness of the amorphous layer (2f and references are listed. (S interdiffusion of polycrystalline metal with semiconductor single crystal, and A interdiffusion of amorphous semiconductor layers with polycrystalline metal)...

A. L. Briseno et al.. Patterned growth of large oriented organic semiconductor single crystals on self-assembled monolayer templates, J. Am. Chem. Soc., 127,12164, 2005. 

From a materials perspective, the field of semiconductor electrochemistry and photoelectrochemistry has evolved from the use of semiconductor single crystals to polycrystaUine thin films and, more recently, to nanocrystalline films. The latter have been variously termed membranes, nanoporous or nanophase films, meso-porous films, nanostructured films, and so on they are distinguished from their polycrystalhne electrode predecessors by the crystallite size (nm versus pm in the former) and hy their permeability to the electrolyte phase. These films are referred to as nanocrystalline in the following sections. These features render three-dimensional geometry to nanocrystalline films as opposed to the flat or two-dimensional (planar) nature of single crystal or polycrystalline counterparts. 

Semiconductor single crystals grown from extremely pure material exhibit a low conductivity because of low carrier density. The latter can be increased by orders of magnitude by doping the material. The principal effect of doping is illustrated... 

The structure of the surface layer also depends on the orientation of the semiconductor single crystal as has been shown for ZnO. Because of the wurtzite lattice of the crystal, two different surfaces can be prepared, namely one which consists only of Zn ions ((0001) surface) and a second where only oxygen is exposed to the electrolyte ((0001) surface) as shown in Figure 5.1c [2]. Other interesting examples are layered dichalcogenide crystals with the composition MX2 (M = transition metal, X = S, Se, Te). These are characterized by sheets of covalently bound X-M-X sandwiches, the latter being kept together by van der Waals... 

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