Bands, in semiconductors

Phillips J C 1973 Bonds and Bands in Semiconductors (San Diego Academic)... 

Charging of the surface accompanying adsorption process and resulting in the change of the energy profile of the bottom of the conductivity band and, naturally, the ceiling of the valence band in semiconductors... 

S2.3 Point Defects and Energy Bands in Semiconductors and Insulators... 

Long, D. (1968), Energy Bands in Semiconductors, Interscience, New York, p. 111. 

Cohen, M.L. Physica Scripts 1982, Tl, 5. Cohen, M.L. Phys. Rev. B1985, 32,7988. Phillips, J.C. Bonds and Bands in Semiconductors Academic Press, New York, 1973. 

The energy difference between the valence and conduction bands in semiconductors. It is related to the absorption edge of the semiconductor. 

What is the dependence of the gap between the energy bands in semiconductor nanocrystals on its size ... 

Figure 1. Schematic illustration of how energy bands in semiconductors evolve from discrete atomic states for the specific example of silicon.

In insulators, the energy gap between the valence band and the conduction band is so large that electrons cannot be promoted into the conduction band. In semiconductors, electrons can cross the energy gap at higher temperatures, and therefore conductivity increases with increasing temperature as more electrons are able to reach the conduction band. 

The Debye characteristic temperature of isotropic bodies is directly associated with the bulk modulus and therefore with all the other properties of matter dependent, to a certain degree, on the atomization energy, the surface energy u, the elasticity moduli, the expansion coefficients, the width of the forbidden band in semiconductors, etc. 

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