Ion implantation, semiconductor

Volume 45 Effect of Disorder and Defects in Ion-Implanted Semiconductors Electrical and Physiochemical Characterization... 

M. L. Polignano and G. Queirolo, Studies of the Stripping Hall Effect in Ion-Implanted Silicon J. Stoemenos, Transmission Electron Microscopy Analyses R. Nipoti and M. Servidori, Rutherford Backscattering Studies of Ion Implanted Semiconductors... 

A. Seas and C. Christofides, Transmission and Reflection Spectroscopy on Ion Implanted Semiconductors... 

A. Othonos and C. Christofides, Photoluminescence and Raman Scattering of Ion Implanted Semiconductors. Influence of Annealing... 

Pulsed laser or electron beam offer a unique method to deposit a large amount of energy into the first few microns of the irradiated material so rapidly that the bulk temperature is not affected. This method was applied initially to anneal the damage in ion implanted semiconductors [1] and to activate electrically the... 

The basic mechanism responsible for instance of the annealing of ion implanted semiconductors is shown schematically in Fig.l. A single crystal substrate is overlaid with an amorphous layer and is irradiated with a pulsed electron or laser beam. 

The vacancy is very mobile in many semiconductors. In Si, its activation energy for diffusion ranges from 0.18 to 0.45 eV depending on its charge state, that is, on the position of the Fenni level. Wlrile the equilibrium concentration of vacancies is rather low, many processing steps inject vacancies into the bulk ion implantation, electron irradiation, etching, the deposition of some thin films on the surface, such as Al contacts or nitride layers etc. Such non-equilibrium situations can greatly affect the mobility of impurities as vacancies flood the sample and trap interstitials. 

Phosphoms pentafluoride behaves as a Lewis acid showing electron-accepting properties. It forms complexes, generally in a ratio of 1 1 with Lewis bases, with amines, ethers, nitriles, sulfoxides, and other bases. These complexes are frequently less stable than the similar BF complexes, probably owing to stearic factors. Because it is a strong acceptor, PF is an excellent catalyst especially in ionic polymeri2ations. Phosphoms pentafluoride is also used as a source of phosphoms for ion implantation (qv) in semiconductors (qv) (26). 

Although there has been theoretical and experimental interest in the effects of ion bombardment on materials since about 1960 (153), the growth in ion implantation technology and appHcations since then is due almost solely to the semiconductor (integrated circuit) industry. The advantages of ion implantation for semiconductor doping were first pointed out in 1955 (154), but these advantages were not widely accepted until about 1970. 

Although a great number of compound semiconductor devices make use of epitaxy to form the cote vertical stmcture of the device, ion implantation (qv) is a powerful tool in creating both horizontal and vertical modifications to a device. Ion implantation can be used to dope a semiconductor either fi- or / -type by using appropriate species. Implantation can also be used to render a region semi-insulating or to initiate multilayer intermixing. 

Analysis of stress distributions in epitaxial layers In-situ characterization of dislocation motion in semiconductors Depth-resolved studies of defects in ion-implanted samples and of interface states in heterojunctions. 

Another basic approach of CL analysis methods is that of the CL spectroscopy system (having no electron-beam scanning capability), which essentially consists of a high-vacuum chamber with optical ports and a port for an electron gun. Such a system is a relatively simple but powerful tool for the analysis of ion implantation-induced damage, depth distribution of defects, and interfaces in semiconductors. ... 

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