Paper electrical properties

Paper-Base Grades. Grade X is primarily intended for mechanical apphcations where electrical properties are of secondary importance. It should be used with discretion when high humidity conditions are encountered and it is not equal to fabric-base grades in impact strength. 

Electrokinetic processes are widely used in different fields of science and technology. We had already mentioned the use of electrokinetic processes for research into the electric properties of surface layers of insulating materials. Such measurements are used, in particular, when studying the surface properties of polymeric materials, their behavior in different media, and their interactions with other materials (e.g., with adsorbing surface-active substances). The results of this research are used in textile, cellulose and paper, and other industries. 

To dissociate molecules in an adsorbed layer of oxide, a spillover (photospillover) phenomenon can be used with prior activation of the surface of zinc oxide by particles (clusters) of Pt, Pd, Ni, etc. In the course of adsorption of molecular gases (especially H2, O2) or more complex molecules these particles emit (generate) active particles on the surface of substrate [12], which are capable, as we have already noted, to affect considerably the impurity conductivity even at minor concentrations. Thus, the semiconductor oxide activated by cluster particles of transition metals plays a double role of both activator and analyzer (sensor). The latter conclusion is proved by a large number of papers discussed in detail in review [13]. The papers cited maintain that the particles formed during the process of activation are fairly active as to their influence on the electrical properties of sensors made of semiconductor oxides in the form of thin sintered films. 

Because of its excellent mechanical and electrical properties c-BN is of great interest for a number of applications (e.g. grinding powders, wear parts, electronic parts, etc.). Searching the literature, the impression arises that the applications of c-BN are kept a bit secret. Most of the relevant references are patents (up to 90% depending on the topic) giving less exact data about the process. Papers published in journals giving detailed information are rare. 

In this paper we consider two specific challenges. First, how might transition metals be linked to phosphazene high polymers Such systems are of interest as immobilized catalysts or materials with unusual electrical properties. Second, how can bioactive agents be attached to polyphosphazenes to prepare, for example, targeted, slow release chemotherapeutic agents ... 

Since the photoelectron spectrum of HOF has been recently observed, Chong et al. have computed the VIP s using perturbation corrections to Koopman s theorem.514 These were then used to assign the spectra. A very recent paper has also presented ab initio calculations on HOC1,515 using a (9,5) basis on O, a (12, 9) basis for Cl, and a 5j basis on H, all of which were contracted. Several electrical properties were computed and compared with microwave data. 

There are many elements and alloys that possess the electrical property known as band gap [5] that are useful for semiconductor devices. Silicon became the lynchpin material for device fabrication. It is currently, and will continue to be, the most important material for integrated circuit fabrication. Alloys of group III and V elements are important for optical devices such as lasers, optical detectors, and specialized high-speed circuits. In this paper, the fabrication of silicon devices will be used to illustrate the role of chemical processing in circuit manufacture. 

The situation with II-VI semiconductors such as ZnO is similar to the situation with the elemental and the III-V semiconductors in respect of the location of the impurity atoms and their influences on the electric property. It is reported in ZnO that P, As, or S atom replaces either Zn or O site, and a part of them are also located at an interstitial site, as well as at a substitutional site [2,5-7], The effect of a few kind of impurities such as group-IIIA and -VA elements on the electric property of ZnO was extensively studied, especially when the impurity atoms were located at a substitutional site. The effects of the greater part of elements in the periodic table on the electric property of ZnO are, however, not well understood yet. The purpose of the present study is to calculate energy levels of the impurity atoms from Li to Bi in the periodic table, to clarify the effect of impurity atoms on the electric property of ZnO. In the present paper, we consider double possible configuration of the impurity atoms in ZnO an atom substitutes the cation lattice site, while another atom also substitutes the anion sublattice site. The calculations of the electronic structure are performed by the discrete-variational (DV)-Xa method using the program code SCAT [8,9],... 

PVCB is brown in color, obtained by reacting acetylene with carbazole. The plastic has excellent electrical properties and good heat and chemical resistance. Use includes high frequency dielectrics, impregnant for paper capacitors, and photoconductive plastics. 

In this paper, we report the preparation of Sr- and Mn-doped lanthanum gallate powders (Lao.gSro.iGai.xMnxOs, x=0.2, 0.35, 0.43) by a glycine nitrate process. The electrical properties of sintered pellets from as-prepared powders at different atmospheres, as well as their chemical stability under H2 atmosphere were characterized. 

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