P-n-junction

Esaki L 1958 New phenomenon in narrow germanium p-n junction Phys. Rev. 109 603... 

Figure C2.15.8. The p-njimction (a) p-type andn-type materials, (b) depletion layer fonnation at the p-n interface or junction and (c) p-n junction laser action.

Figure C2.16.7. A schematic energy band diagram of a p-n junction witliout external bias (a) and under forward bias (b). Electrons and holes are indicated witli - and + signs, respectively. It should be remembered tliat tlie energy of electrons increases by moving up, holes by moving down. Electrons injected into tlie p side of tlie junction become minority carriers. Approximate positions of donor and acceptor levels and tlie Feniii level, are indicated.

Light is generated in semiconductors in the process of radiative recombination. In a direct semiconductor, minority carrier population created by injection in a forward biased p-n junction can recombine radiatively, generating photons with energy about equal to E. The recombination process is spontaneous, individual electron-hole recombination events are random and not related to each other. This process is the basis of LEDs [36]. 

The bipolar junction transistor (BIT) consists of tliree layers doped n-p-n or p-n-p tliat constitute tire emitter, base and collector, respectively. This stmcture can be considered as two back-to-back p-n junctions. Under nonnal operation, tire emitter-base junction is forward biased to inject minority carriers into tire base region. For example, tire n type emitter injects electrons into a p type base. The electrons in tire base, now minority carriers, diffuse tlirough tire base layer. The base-collector junction is reverse biased and its electric field sweeps tire carriers diffusing tlirough tlie base into tlie collector. The BIT operates by transport of minority carriers, but botli electrons and holes contribute to tlie overall current. 

A more effective carrier confinement is offered by a double heterostructure in which a thin layer of a low-gap material is sandwiched between larger-gap layers. The physical junction between two materials of different gaps is called a heterointerface. A schematic representation of the band diagram of such a stmcture is shown in figure C2.l6.l0. The electrons, injected under forward bias across the p-n junction into the lower-bandgap material, encounter a potential barrier AE at the p-p junction which inliibits their motion away from the junction. The holes see a potential barrier of... 

It is used as a fluorinating reagent in semiconductor doping, to synthesi2e some hexafluoroarsenate compounds, and in the manufacture of graphite intercalated compounds (10) (see Semiconductors). AsF has been used to achieve >8% total area simulated air-mass 1 power conversion efficiencies in Si p-n junction solar cells (11) (see Solarenergy). It is commercially produced, but usage is estimated to be less than 100 kg/yr. 

The impurity atoms used to form the p—n junction form well-defined energy levels within the band gap. These levels are shallow in the sense that the donor levels He close to the conduction band (Fig. lb) and the acceptor levels are close to the valence band (Fig. Ic). The thermal energy at room temperature is large enough for most of the dopant atoms contributing to the impurity levels to become ionized. Thus, in the -type region, some electrons in the valence band have sufficient thermal energy to be excited into the acceptor level and leave mobile holes in the valence band. Similar excitation occurs for electrons from the donor to conduction bands of the n-ty e material. The electrons in the conduction band of the n-ty e semiconductor and the holes in the valence band of the -type semiconductor are called majority carriers. Likewise, holes in the -type, and electrons in the -type semiconductor are called minority carriers. 

Fig. 2. Representation of the band edges in a semiconductor p—n junction where shallow donor, acceptor energies, and the Fermi level are labeled Ejy E, and E respectively, (a) Without external bias is the built-in potential of the p—n junction (b) under an appHed forward voltage F. ...

The noise is expressed as noise density in units of V/(Hz), or integrated over a frequency range and given as volts rms. Typically, photoconductors are characterized by a g-r noise plateau from 10 to 10 Hz. Photovoltaic detectors exhibit similar behavior, but the 1/f knee may be less than 100 Hz and the high frequency noise roU off is deterrnined by the p—n junction impedance—capacitance product or the amplifier (AMP) circuit when operated in a transimpedance mode. Bolometers exhibit an additional noise, associated with thermal conductance. 

When sunlight falls on a p—n junction solar cell while it is short-circuited, the magnitude of remains essentially the same as it was in darkness. Because the diffusion of majority current only varies with lA, the majority current does not change. However, additional minority carriers are formed by... 

In addition to its use as a rectifier, the p—n junction (26) is the fundamental building block for bipolar, junction EFT (fFET), and MOSFET transistors. A thorough understanding of p—n junctions explains much of transistor behavior. The theory (5) of the p—n junction and its role in bipolar transistors was presented within a year of the discovery of the point-contact transistor. 

Fig. 6. An abmpt p—n junction in thermal equiUbiium (a) space—charge distribution where (-) indicate majority carrier distribution tails and the charge...

In general, in a planar process, — junctions are formed just below the surface of a siUcon wafer by the implantation of donor ions into a type region or acceptor ions into an n-ty e region. Thus, the general concern is with -p or -n junctions. As the initial wafer concentration of acceptors or donors in sihcon increases from 10 to 10 cm increases from about 0.81 to 1.04 V for a p n junction and is about 10 mV higher for an -p... 

When electrons are injected as minority carriers into a -type semiconductor they may diffuse, drift, or disappear. That is, their electrical behavior is determined by diffusion in concentration gradients, drift in electric fields (potential gradients), or disappearance through recombination with majority carrier holes. Thus, the transport behavior of minority carriers can be described by a continuity equation. To derive the p—n junction equation, steady-state is assumed, so that = 0, and a neutral region outside the depletion region is assumed, so that the electric field is zero. Under these circumstances,... 

Fig. 7. Circuit symbol and current, /, voltage, U, characteristic of a p—n junction diode where = breakdown voltage(32).

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