One-step growth curve

Figure 1.10 The one-step growth curve of virus replication. This graph displays the results of a single round of viral multiplication in a population of cells.

Figure 5.32 One-step growth curve of animal viruses.

The importance of the conclusion that bacterial multiplication stops should not be ignored. This fact has since been affirmed by colony counts of bacteria multiply infected with T2r+ (54), T3 (225), and T7 (262), by cytochemical observation, and by the constancy of the infectious centers during the latent period of one-step growth curves of multiply infected bacteria. Indeed, no one has ever demonstrated that phage-infected E. coli can multiply. ... 

In order to study the virus growth curve a one-step growth cycle is performed. A high multiplicity of infection (m.o.i.) is used to ensure every cell is infected — usually 10 plaque forming units (p.f.u.) per cell is adequate. For virus production, however, the infection is prolonged under conditions where secondary infection can occur and a low m.o.i. is recommended especially where there is a tendency for defective virus particles to be produced. 

Fig. 4. A solution of nucleotide triphosphate is incubated in the presence of QP replicase for just long enough to assure the manifold replication of any templates that may contaminate the enzyme. The incubation is interrupted before even one template has time to arise de novo. The solution is then divided up into portions and the incubation is continued, this time long enough to allow products to arise de novo and to multiply. The RNA formed in each portion is analyzed by the fingerprint method various different reaction products are found. Sometimes the growth curve displays the appearance of a new mutant. Although the incubation time of template-instructed synthesis is determined unambiguously (because of the superposition of many individual processes) the synthesis de novo shows a scatter of induction times. This indicates that the initiation step is a unique molecular process which is then rapidly amplified. ...

The time to vitrification, as a function of reaction temperature, can now be solved for each of the three cases considered. The only case for which experimental data are available for t j, is the nonlinear step growth case. Combining Eqs. (13)-(16), (19), and those relating the crosslink dmsity to p, results in the plot of T vs. tyj, shown in Fig. 16. The system used was the same one used in Fig. IS. Different values of the reaction order (n) were used in Fig. 16. The value of k obtained for n = 1 was used for all values of n. The fit is not entirely satisfactory, but the lack of an accurate kinetic model mitigates against a good fit. The calculated time to vitrification curve is S-shaped, as is seen experimentally. 

Fig. 13 Current transients i(t) for Au (111), miscut < 0.5°, in 0.05 M H2SO4 obtained after a singie potentiai step from 1 = 0.75 V (region II) to various final potentials in region iii. The experimentai traces are given as individual data points, the solid lines represent theoretical curves calculated with the parameters of the numerical fit to a model combining (a) an adsorption process (Eq. 7) and (b) one-step nucleation according to an exponential law with surface diffusion-controlled growth (Eq. 34), (reprinted from Ref. [299]. Copyright 1997 by VCH Verlagsgesellschaft mbH Weinheim).

A further result of Sadler s 2D-simulation was a relation between the step density and growth rate on the one hand and the inclination of the surface with respect to the principal axes on the other. From this relation crystal shapes were derived which show considerable curvature. This result of an exact treatment stands in contrast to Frank s mean-field curvature expression which gives essentially flat profiles. We will return to the discussion of curved edges in Sect. 3.6.3. 

In the A sector (lower right), the deposition is controlled by surface-reaction kinetics as the rate-limiting step. In the B sector (upper left), the deposition is controlled by the mass-transport process and the growth rate is related linearly to the partial pressure of the silicon reactant in the carrier gas. Transition from one rate-control regime to the other is not sharp, but involves a transition zone where both are significant. The presence of a maximum in the curves in Area B would indicate the onset of gas-phase precipitation, where the substrate has become starved and the deposition rate decreased. 

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