N-type contacts

Fig. 10.2. Voltage dependence of charge collection of a thick p-i-n sensor when illuminated through the n-layer with strongly absorbed (665 nm) or weakly absorbed (880 nm) light. The onset of hole collection at 450 V occurs when the depletion layer reaches the n-type contact (Perez Mendez et al. 1989).

The other main loss mechanism in these LEDs is from carriers which do not recombine in the i layer, but instead are transported completely through the film. Ideally, the p-type contact should comprise a blocking layer preventing electrons from being collected, but easily injecting holes, and vice versa for the n-type contact. Perhaps when the band discontinuities between the different alloys are better understood, some new and more efficient structure can be designed. 

J. F. DEWALD (Bell Telephone Laboratories) I do not believe that the effect of semiconductivity on catalysis is completely contained in either the Schottky or the Mott-Schottky approximations. Consider a supported metal catalyst. If one has an exhaustion layer on an n-type support then the total charge in the exhaustion layer would be very small. The potential, acting over so large a distance, would have very little effect on catalysis. If, however, you can cause an electron enrichment layer in the vicinity of the metal-n-type contact, you might expect very much larger catalytic effects, for there would be much larger electric fields near the point of contact. 

The many variations of the diode structure of Fig. 8 include the so-called Schottky barrier diode, a simple metal-semiconductor structure, usually gold on gallium arsenide. Here the metal is biased negative with respect to an n-type or intrinsic semiconductor with a heavily doped n-type contact layer. Gallium arsenide has a 10-fold larger... 

Figure Bl.28.9. Energetic sitiration for an n-type semiconductor (a) before and (b) after contact with an electrolyte solution. The electrochemical potentials of the two systems reach equilibrium by electron exchange at the interface. Transfer of electrons from the semiconductor to the electrolyte leads to a positive space charge layer, W. is the potential drop in the space-charge layer.

Polymer lifetime, mapped for n-type silicon in contact with the polymer electrolyte, 497... 

Solid-state electronic devices such as diodes, transistors, and integrated circuits contain p-n junctions in which a p-type semiconductor is in contact with an n-type semiconductor (Fig. 3.47). The structure of a p-n junction allows an electric current to flow in only one direction. When the electrode attached to the p-type semiconductor has a negative charge, the holes in the p-type semiconductor are attracted to it, the electrons in the n-type semiconductor are attracted to the other (positive) electrode, and current does not flow. When the polarity is reversed, with the negative electrode attached to the n-type semiconductor, electrons flow from the n-type semiconductor through the p-type semiconductor toward the positive electrode. 

A photovoltaic cell is basically a semiconductor diode consisting of a junction similar to the junction of a transistor. An electrical potential is formed by n-type doping on one side and p-type on the other. Under the impact of light (photons), such as in sunlight, electrons move from the p side, across the junction to the n side, and, through electrical contacts, can be drawn as a usable current (Fig. 15.4). 

Simple electroless techniques have been used for the formation of CdTe layers following an anodic or a cathodic route of deposition. For instance, spontaneous cathodic formation of CdTe was observed on Ti or glass electrodes short circuited with a corroding A1 contact (electron source) in a solution of Cd " " and HTe02 ions [96]. After thermal treatment and subsequent growth of an a-Pb02 layer on them, the as-obtained CdTe thin films were found to exhibit n-type behavior in alkaline polysulfide PEC cells. 

The optical properties of electrodeposited, polycrystalline CdTe have been found to be similar to those of single-crystal CdTe [257]. In 1982, Fulop et al. [258] reported the development of metal junction solar cells of high efficiency using thin film (4 p,m) n-type CdTe as absorber, electrodeposited from a typical acidic aqueous solution on metallic substrate (Cu, steel, Ni) and annealed in air at 300 °C. The cells were constructed using a Schottky barrier rectifying junction at the front surface (vacuum-deposited Au, Ni) and a (electrodeposited) Cd ohmic contact at the back. Passivation of the top surface (treatment with KOH and hydrazine) was seen to improve the photovoltaic properties of the rectifying junction. The best fabricated cell comprised an efficiency of 8.6% (AMI), open-circuit voltage of 0.723 V, short-circuit current of 18.7 mA cm, and a fill factor of 0.64. 

Because of the excess holes with an energy lower than the Fermi level that are present at the n-type semiconductor surface in contact with the solution, electron ttansitions from the solution to the semiconductor electrode are facilitated ( egress of holes from the electrode to the reacting species ), and anodic photocurrents arise. Such currents do not arise merely from an acceleration of reactions which, at the particular potential, will also occur in the dark. According to Eq. (29.6), the electrochemical potential, corresponds to a more positive value of electrode potential (E ) than that which actually exists (E). Hence, anodic reactions can occur at the electrode even with redox systems having an equilibrium potential more positive than E (between E and E ) (i.e., reactions that are prohibited in the dark). 

The TFTs are made on transparent glass substrates, onto which gate electrodes are patterned. Typically, the gate electrode is made of chromium. This substrate is introduced in a PECVD reactor, in which silane and ammonia are used for plasma deposition of SiN as the gate material. After subsequent deposition of the a-Si H active layer and the heavily doped n-type a-Si H for the contacts, the devices are taken out of the reactor. Cr contacts are evaporated on top of the structure. The transistor channel is then defined by etching away the top metal and n-type a-Si H. Special care must be taken in that the etchant used for the n-type a-Si H also etches the intrinsic a-Si H. Finally the top passivation SiN, is deposited in a separate run. This passivation layer is needed to protect the TFT during additional processing steps. 

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