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MOSFET field effect mobility

MEH-PPV thin strip FETs [32], DNA—templated SWNT FETs [99], and some other lowdimensional structures [1]. To evaluate the field-effect mobility (/afet) of polymer nanofiber one can consider the relatively low voltage region of the I-V characteristics in terms of the linear region in conventional MOSFETs. Then from the transconductance, the /Afet can be estimated [82] as... [Pg.687]

The operation principle of these TFTs is identical to that of the metal-oxide-semiconductor field-effect transistor (MOSFET) [617,618]. When a positive voltage Vg Is applied to the gate, electrons are accumulated in the a-Si H. At small voltages these electrons will be localized in the deep states of the a-Si H. The conduction and valence bands at the SiN.v-a-Si H interface bend down, and the Fermi level shifts upward. Above a certain threshold voltage Vth a constant proportion of the electrons will be mobile, and the conductivity is increased linearly with Vg - Vih. As a result the transistor switches on. and a current flows from source to drain. The source-drain current /so can be expressed as [619]... [Pg.177]

Field-effect transistors (FETs) Heterojunction bipolar transistors (HBTs) High electron mobility transistors (HEMTs) Metal oxide semiconductor FETs (MOSFETs) Single-electron transistors (SETs) Single-heterojunction HBTs (SH-HBTs) Thin-film transistors (TFTs) hydrogenated amorphous silicon in, 22 135... [Pg.964]

MOS metal oxide sensor, MOSFET metal oxide semiconductor field-effect transistor, IR infrared, CP conducting polymer, QMS quartz crystal microbalance, IMS ion mobility spectrometry, BAW bulk acoustic wave, MS mass spectrometry, SAW siuface acoustic wave, REMPI-TOFMS resonance-enhanced multiphoton ionisation time-of-flight mass spectrometry... [Pg.335]

Fig. 5.2-70 Effective mobility of electrons and holes in MOSFET s inversion channel. Qs = gtotai is the charge on the gate electrode. It is seen that mobility decreases at high transverse electric fields. For comparison, bulk mobilities are fin — 1600, fip = 600cm- /V s [2.96]... Fig. 5.2-70 Effective mobility of electrons and holes in MOSFET s inversion channel. Qs = gtotai is the charge on the gate electrode. It is seen that mobility decreases at high transverse electric fields. For comparison, bulk mobilities are fin — 1600, fip = 600cm- /V s [2.96]...

See other pages where MOSFET field effect mobility is mentioned: [Pg.600]    [Pg.567]    [Pg.247]    [Pg.247]    [Pg.252]    [Pg.262]    [Pg.110]    [Pg.50]    [Pg.478]    [Pg.53]    [Pg.74]    [Pg.835]    [Pg.101]    [Pg.641]    [Pg.834]    [Pg.27]    [Pg.750]    [Pg.439]    [Pg.15]    [Pg.769]    [Pg.382]    [Pg.174]    [Pg.269]   
See also in sourсe #XX -- [ Pg.247 , Pg.257 ]




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