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Regions voltage

Corrosion protection of metals can take many fonns, one of which is passivation. As mentioned above, passivation is the fonnation of a thin protective film (most commonly oxide or hydrated oxide) on a metallic surface. Certain metals that are prone to passivation will fonn a thin oxide film that displaces the electrode potential of the metal by +0.5-2.0 V. The film severely hinders the difflision rate of metal ions from the electrode to tire solid-gas or solid-liquid interface, thus providing corrosion resistance. This decreased corrosion rate is best illustrated by anodic polarization curves, which are constructed by measuring the net current from an electrode into solution (the corrosion current) under an applied voltage. For passivable metals, the current will increase steadily with increasing voltage in the so-called active region until the passivating film fonns, at which point the current will rapidly decrease. This behaviour is characteristic of metals that are susceptible to passivation. [Pg.923]

Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-... Figure Bl.22.4. Differential IR absorption spectra from a metal-oxide silicon field-effect transistor (MOSFET) as a fiinction of gate voltage (or inversion layer density, n, which is the parameter reported in the figure). Clear peaks are seen in these spectra for the 0-1, 0-2 and 0-3 inter-electric-field subband transitions that develop for charge carriers when confined to a narrow (<100 A) region near the oxide-semiconductor interface. The inset shows a schematic representation of the attenuated total reflection (ATR) arrangement used in these experiments. These data provide an example of the use of ATR IR spectroscopy for the probing of electronic states in semiconductor surfaces [44]-...
In tlie polarization curve of figure C2.8.4 (solid line), tlie two regimes, activation control and diffusion control, are schematically shown. The anodic and catliodic plateau regions at high anodic and catliodic voltages, respectively, indicate diffusion control tlie current is independent of tlie applied voltage and7 is reached. [Pg.2721]

The graph of Figure 6.8 illustrates the effect of increasing voltage on the electric current between two electrodes immersed in a gas. The circuit is completed by an external resistance, used to limit the current flow. As shown in Figure 6.8, the discharge can be considered in regions, which are described below. [Pg.39]

This region is often referred to as the Townsend breakdown region, in which — with little or no further change in voltage — the current can rise by several orders of magnitude, e.g., from Kh to 10" A. There is usually a spark produced during the initiation of this process. The current flow is controlled by the size of the resistance in the external voltage circuit. [Pg.41]


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Current-voltage curve mass transport region

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