MOCVD deposition technique

Epitaxial crystal growth methods such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have advanced to the point that active regions of essentially arbitrary thicknesses can be prepared (see Thin films, film deposition techniques). Most semiconductors used for lasers are cubic crystals where the lattice constant, the dimension of the cube, is equal to two atomic plane distances. When the thickness of this layer is reduced to dimensions on the order of 0.01 )J.m, between 20 and 30 atomic plane distances, quantum mechanics is needed for an accurate description of the confined carrier energies (11). Such layers are called quantum wells and the lasers containing such layers in their active regions are known as quantum well lasers (12). 

Organoindium substances are important, especially for the production of materials by metal-organic chemical vapor-phase deposition (MOCVD). This technique involves the thermal decomposition of mixtures of an organoindium compound and a compound such as phosphine (PH3), leading to the deposition of ordered layers of InP. The resulting compound can be used in the formation of semiconductors and solid-state optical devices (similar to silicon), see also Inorganic Chemistry. 

MOCVD techniques for BST capacitor technology for next-generation ULSI DRAMs were reviewed. Although it has been proven that the material properties of BST films are good enough for DRAM applications, integration of the BST film into the devices requires further research, especially in terms of BST film deposition techniques and electrode fabrication technologies. 

The original homojunction systems have successively been replaced by heterojunction lasers [8.87, 8.88], which have a complex layered stmctiue (Fig. 8.33), made possible through the development of MBE (Molecular Beam Epitaxy) and MOCVD (Metal Chemical Vapom Deposition) techniques. AljcGai-a As diode lasers operating at room temperature arornid 800 nni have obtained great importance for use in CD players, laser prhiters and bar-... 

The U.S. electronics industry appears to be ahead of, or on a par with, Japanese industry in most areas of current techniques for the deposition and processing of thin films—chemical vapor deposition (CVD), MOCVD, and MBE. There are differences in some areas, thongh, that may be cracial to future technologies. For example, the Japanese effort in low-pressure microwave plasma research is impressive and surpasses the U.S. effort in some respects. The Japanese are ahead of their U.S. counterparts in the design and manufacture of deposition equipment as well. 

Silver(I) /3-diketonate derivatives have received significant attention due to the ease with which they can be converted to the elemental metal by thermal decomposition techniques such as metal organic chemical vapor deposition (MOCVD).59 The larger cationic radius of silver(I) with respect to copper(I) has caused problems in achieving both good volatility and adequate stability of silver(I) complexes for the use in CVD apparatus. These problems have been overcome with the new techniques such as super critical fluid transport CVD (SFTCVD), aerosol-assisted CVD (AACVD), and spray pyrolysis, where the requirements for volatile precursors are less stringent. 

Various techniques of thin film deposition, including CVD (also abbreviated as MOCVD, metalloorganic chemical-vapor deposition) have been under intensive development for the. r-block elements, and particularly the alkaline earth metals, since the late 1980s. - The lability of the Cp rings of 49 has also made it a useful source of the... 

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