Organoindium compounds,

RCH—CHSiMe2X + ICH=CHR X ((Et2N)jS Mc3Sif2 / —r- RCH=CHCH cat (JX-C3H5P dCl orPd(PPli3)4 

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Nomura, R. Fujii, S. Kanaya, K. Matsuda, H. 1990. Oxygen- or sulfur-containing organoindium compounds for precursors of indium oxide and sulfide thin films. Polyhedron 9 361-366. 

The nucleophilic reaction of Grignard reagents with azetidin-2,3-dione 270 yielded mainly fA-3-hydroxyazetidin-2-ones 271 (Equation 76) <2006S115>. A regio- and stereoselective reaction of azetidine-2,3-dione 272 with an organoindium compound led to the formation of azetidin-2-one-tethered homoallylic alcohol 273 (Equation 77), which has been used as precursor of spirocyclic azetidin-2-ones <2004TL6429>. 

Organoindium substances are important, especially for the production of materials by metal-organic chemical vapor-phase deposition (MOCVD). This technique involves the thermal decomposition of mixtures of an organoindium compound and a compound such as phosphine (PH3), leading to the deposition of ordered layers of InP. The resulting compound can be used in the formation of semiconductors and solid-state optical devices (similar to silicon), see also Inorganic Chemistry. 

A large part of organoindium chemistry so far reported deals with reactions of allylic and propargylic indium reagents. These are summarized in Sections 9.14.3.1-9.14.3.9. Reactions of other type of organoindium compounds are overviewed in Sections 9.14.3.10-9.14.3.14. 

Table 1 Selective reported physical properties of some organoindium compounds ...

Scheme 6 Synthesis of organoindium compounds via methane elimination...

H. Osaki and M. Oshima, Preparation of Organoindium Compounds for Manufacture of Semiconductors by MOCVD, Jpn. KokaiTokkyo Koho, JP 11012283 A2 1999. 

Procedures for the preparation of organoindium compounds from In metal with... 

Figure 7.2 Cross-coupling reactions involving organoindium compounds.

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