Metallic semiconductor

The growth of solid films onto solid substrates allows for the production of artificial stmctures that can be used for many purposes. For example, film growth is used to create pn junctions and metal-semiconductor contacts during semiconductor manufacture, and to produce catalytic surfaces with properties that are not found in any single material. Lubrication can be applied to solid surfaces by the appropriate growth of a solid lubricating film. Film growth is also... 

An important class of molecule often described as clusters may better be referred to as micro-particles. This class includes metal, semiconductor and carbon clusters. Particularly interesting are the carbon clusters, C. ... 

Dielectric constants of metals, semiconductors and insulators can be detennined from ellipsometry measurements [38, 39]. Since the dielectric constant can vary depending on the way in which a fihn is grown, the measurement of accurate film thicknesses relies on having accurate values of the dielectric constant. One connnon procedure for detennining dielectric constants is by using a Kramers-Kronig analysis of spectroscopic reflectance data [39]. This method suffers from the series-tennination error as well as the difficulty of making corrections for the presence of overlayer contaminants. The ellipsometry method is for the most part free of both these sources of error and thus yields the most accurate values to date [39]. 

Katzenellenbogen N and Grischkowsky D 1991 Efficient generation of 380 fs pulses of THz radiation by ultrafast laser pulse excitation of a biased metal-semiconductor interface Appl. Phys. Lett. 58 222-4... 

MESFET. See Metal semiconductor field-effect transistor. 

Fig. 3. An overview of atomistic mechanisms involved in electroceramic components and the corresponding uses (a) ferroelectric domains capacitors and piezoelectrics, PTC thermistors (b) electronic conduction NTC thermistor (c) insulators and substrates (d) surface conduction humidity sensors (e) ferrimagnetic domains ferrite hard and soft magnets, magnetic tape (f) metal—semiconductor transition critical temperature NTC thermistor (g) ionic conduction gas sensors and batteries and (h) grain boundary phenomena varistors, boundary layer capacitors, PTC thermistors.

The materials deposited by PVD techniques include metals, semiconductors (qv), alloys, intermetaUic compounds, refractory compounds, ie, oxides, carbides, nitrides, borides, etc, and mixtures thereof. The source material must be pure and free of gases and inclusions, otherwise spitting may occur. 

Metals for Schottl Contacts. Good Schottky contacts on semiconductor surfaces should not have any interaction with the semiconductor as is common in ohmic contacts. Schottky contacts have clean, abmpt metal—semiconductor interfaces that present rectifying contacts to electron or hole conduction. Schottky contacts are usuaHy not intentionaHy annealed, although in some circumstances the contacts need to be able to withstand high temperature processing and maintain good Schottky behavior. 

Applications of CL to the analysis of electron beam-sensitive materials and to depth-resolved analysis of metal-semiconductor interfaces by using low electron-beam energies (on the order of 1 keV) will be extended to other materials and structures. 

Ultrathin metallic, semiconductor, insulator, or organic overlayers can be deposited on SERS-active metal surfaces. 

As the nanotube diameter increases, more wave vectors become allowed for the circumferential direction, the nanotubes become more two-dimensional and the semiconducting band gap disappears, as is illustrated in Fig. 19 which shows the semiconducting band gap to be proportional to the reciprocal diameter l/dt. At a nanotube diameter of dt 3 nm (Fig. 19), the bandgap becomes comparable to thermal energies at room temperature, showing that small diameter nanotubes are needed to observe these quantum effects. Calculation of the electronic structure for two concentric nanotubes shows that pairs of concentric metal-semiconductor or semiconductor-metal nanotubes are stable [178]. 

Instruments based on the contact principle can further be divided into two classes mechanical thermometers and electrical thermometers. Mechanical thermometers are based on the thermal expansion of a gas, a liquid, or a solid material. They are simple, robust, and do not normally require power to operate. Electrical resistance thermometers utilize the connection between the electrical resistance and the sensor temperature. Thermocouples are based on the phenomenon, where a temperature-dependent voltage is created in a circuit of two different metals. Semiconductor thermometers have a diode or transistor probe, or a more advanced integrated circuit, where the voltage of the semiconductor junctions is temperature dependent. All electrical meters are easy to incorporate with modern data acquisition systems. A summary of contact thermometer properties is shown in Table 12.3. 

J. C. Carrano, P. A. Grudowski, C. J. Biting, R. D. Dupuis, J. C. Campbell. Very low dark current metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers. Appl Phys Lett 70 1992, 1997. 

Contacts are the elementary building blocks for all electronic devices. These include interfaces between semiconductors of different doping type (homojunctions) or of different composition (heterojunctions), and junctions between a metal and a semiconductor, which can be either rectifying (Schotlky junction) or ohmic. Because of their primary importance, the physics of semiconductor junctions is largely dealt with in numerous textbooks [11, 12]. We shall concentrate here on basic aspects of the metal-semiconductor (MS) and, above all, metal-insulator-semiconductor (MIS) junctions, which arc involved in the oiganic field-effect transistors. 

---