Depth-resolved analysis

Applications of CL to the analysis of electron beam-sensitive materials and to depth-resolved analysis of metal-semiconductor interfaces by using low electron-beam energies (on the order of 1 keV) will be extended to other materials and structures. 

J. Kanzow, F. Faupel, W. Egger, P. Sperr, G. Kogel, C. Wehlack, W. Possart, Depth-resolved analysis of the ageing behaviour of epoxy resin thin films by positron spectroscopy, Proc. oral pres., 7th European Adhesion Conference EURADH 2004, Ereiburg im Breisgau, September 5-9, 2004. 

Depth-Resolved Analysis of the Aging Behavior of Epoxy Thin Films by Positron Spectroscopy... 

T. Schmid, L. Kazarian, U. Panne, R. Niessner. Depth-resolved analysis of biofilms by photoacoustic spectroscopy. Awa/yficaZ Sciences, Vol. 17 (Special Issue), pp. 574-577, April 2001. 

Most recently, Dedryvere and Edstrom et al. conducted the extensive research work on the interfacial mechanisms of Si anode, as shown in Fig. 5.35, including reaction of surface oxide, Li-Si alloying process, and passivation layer formation by XPS [102]. To reveal more depth information of SEI ingredients, they conducted a thorough nondestructive depth-resolved analysis by nsing both soft X-rays (100-800 eV) and hard X-rays (2,000-7,000 eV) from two different synchrotron facilities compared with in-house XPS (1,487 eV). The formation of SEI starts from 0.5 V vs. Li/LP. At the end of discharge (0.01 V vs. Li/LP), a thick SEI layer has formed, and carbon black (284 eV, black shadows) can be observed only at 2,3(K) and 6,900 eV. New carbonaceous species have been identified at the surface, C-0... 

Mason, P.R.D.,Mank,A.J.G. (2001) Depth-resolved analysis in multi-layered glass and metal materials using laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) Journal of Analytical Atomic Spectrometry, 16,1381-1388. 

Analysis of stress distributions in epitaxial layers In-situ characterization of dislocation motion in semiconductors Depth-resolved studies of defects in ion-implanted samples and of interface states in heterojunctions. 

Fig. 7.12a). In the special case where Z is fixed perpendicular to the surface of the sample the depth resolving power Rdepth = d/Ad is relevant which becomes important for depth profile and thin-film analysis. 

The anion distribution in anodic oxides is usually determined by ion bombardment or chemical sectioning of alumina samples with subsequent analysis by AES or XPS methods, or by the use of the depth-resolving techniques, such as RBS.150 Different types of concentration profiles are shown in Fig. 27. 

The color-coded nature of the PL in conjunction with Auger electron spectroscopy (AES)/depth profile analysis (which spatially resolves the alloys relative to the surface) permits mapping of the effective electric field (EEF) in the solid the term "effective electric field" reflects the idea that the field has contributions from, for example, band-edge and effective-mass gradients in addition to contributions from band bending (7). 

Fig. 29.6 Depth-resolved XPS results for the analysis of the atomic nitrogen concentrations of an unaged thin epoxy film versus the sputter depth of the adhesive.

Composition or property based on specific nuclei relaxation Depth Lateral Other Not used for spatially resolved analysis ... 

Elemental composition Depth Lateral Other N ot normally used for spatially resolved analysis but can be down to sub mm ... 

Modern LA-ICPMS configurations enable spatially resolved analysis laterally and in depth. The laser beam diameter can be typically adjusted from a size as small as 5 pm up to values of 200-300 pm, depending on the instrument used. Of course, selecting a small spot size... 

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