Metal-oxide-semiconductor structure

Dadap J I, Hu X F, Anderson M H, Downer M C, Lowell J Kand Aktsiperov O A 1996 Optical second-harmonic electroreflectance spectroscopy of a Si(OOOI) metal-oxide-semiconductor structure Phys. Rev. B 53 R7607-9... 

The production of molecular hydrogen was measured in the effluent gas of seven fermentations [58]. The aim of this primary investigation was to study the use of a H2-sensitive metal-oxide-semiconductor structure in physiological studies of Escherichia coli. In order to yield more information, the metabolic heat was measured with a flow micro calorimeter in parallel with the determination of molecular hydrogen. 

Gas sensitive palladium metal oxide semiconductor structures (MOS) have been developed for the measurement of hydrogen and ammonia (Lundstrom, 1978). For indication of NH3 the gate has been covered additionally with iridium (Fig. 12). 

The same reaction system, immobilized on porous glass, has been used by Winquist et al. (1986) in two reactors combined with an ammonia sensitive iridium metal oxide semiconductor structure in an FLA system. NH3 up to 0.2 mmol/1 could be completely removed in the glutamate dehydrogenase reactor. 

Thermal oxidation of OaAs for example produces a gallium rich oxide. In a number of studies, it has been shown that the oxide on GaAs contains Ga O and GajOg (see figure 6) and As is peaked at the interface. By preferential oxidation of one component of the compound semiconductor, defects are produced at the interface. Again this produces a barrier height equal to that observed for most of the metals evaporated on the GaAs surface (10). This accounts for the unsuccessful attempts to make metal oxide semiconductor structures by intrinsic III-V oxidation. 

We have shown that the measurement of ammonia gas behind a gas permeable membrane can be an interesting alternative to the use of a pH electrode in solution. Ammonia sensors based on metal-oxide-semiconductor structures appear to be useful in this context they are reasonably fast, stable and sensitive. It is furthermore demonstrated that these devices can be used in combination with dry reagent chemistry to provide simple assay methods. The determination of substrates which can be made to release ammonia in the presence of the... 

Winquist F, Spetz A, Armgarth M, Lundstrom I (1985) Biosensors based on ammonia sensitive metal-oxide-semiconductor structures. Sens Actuators 8 91-100... 

F Wmquist, A Spetz, M Armgarth, C Nylander and I Lundstrom, Modified palladium metal-oxide-semiconductor structures with increased ammonia gas sensitivity, Appl Phys Lett, 43 (1983)... 

M Kanoun, A. Souifi, T. Baron, and F. Mazen, Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications, Appl. Phys. Lett., 84, 5079-5082... 

Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited AI2O3 dielectric. Appl. Phys. Lett., Vol. 92, p. 143507, ISSN 0003-6951... 

M Yoshikawa, H Itoh, Y Morita, I Nashiyama, S Misawa, H Okumura, S Yoshida. Effects of gamma-ray irradiation on cubic silicon carbide metal-oxide-semiconductor structure. J Appl Phys 70 1309, 1991. 

Fig. 6. Schematic of a cross section of a typical multilevel CMOS (complimentary metal oxide semiconductor) integrated circuit structure.

NMOS and PMOS (p-channel MOS) transistors are used side by side in complementary metal-oxide-semiconductor (CMOS) technology to form logic elements. These structures have the advantage of extremely low power consumption and are important in ultralarge-scale integration (ULSI) and very-large-scale integration (VLSI) (13). 

Fig. 8.8 Model of charge transport and band structure of macroscopic polycrystalline (A) and (B) nano crystalline metal oxide semiconductors (a) in their initial state and (b) after exposure to reducing gas (adapted from Franke et al., 2006)...

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