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Metal Oxidation Growth

The formation and subsequent breakdown of the spinel layer which occurs during the incubation stage is followed by the growth of AI2O3-AI composite. This is a complex phenomenon whose details are still not fully understood. Incremental advance of the growing composite involves at least three steps. [Pg.300]

The growth of an AI2O3-AI composite from a binary Al-Mg alloy into air will serve as a model system that avoids the complications of multiple solute elements but retains the essential features of oxidative growth. [Pg.300]


To ensure metal oxide growth occurs only on the nanocarbon, careful consideration of the hydrolysis conditions are required. The ideal conditions vary between precursors, nanocarbon, linking mechanism and growth process to such an extent that optimization is required [232],... [Pg.148]

Directed Metal Oxidation Growth from other Aluminum Alloys... [Pg.304]

Figure 10.13 Effect of t pearature on metal oxide growth of some materials exposed to air (21% Oa) for one year. 1 mil = 0.25 nun [18]. Figure 10.13 Effect of t pearature on metal oxide growth of some materials exposed to air (21% Oa) for one year. 1 mil = 0.25 nun [18].
Metal oxide semiconductor sensors can be prepared in many different ways, in any case the general advice is to produce a nano crystalline material in such a way the modulation of the surface conductance band population becomes dominant in the whole sensor providing the maximum sensitivity. Recently metal oxides growth in regular shapes such as nanosized belts and rods has shown peculiar properties. The characteristics of these stmctures, although interesting, have not yet resulted in practical improvements of performances. [Pg.658]

Fig. 9. Fabrication sequence for an oxide-isolated -weU CMOS process, where is boron and X is arsenic. See text, (a) Formation of blanket pod oxide and Si N layer resist patterning (mask 1) ion implantation of channel stoppers (chanstop) (steps 1—3). (b) Growth of isolation field oxide removal of resist, Si N, and pod oxide growth of thin (<200 nm) Si02 gate oxide layer (steps 4—6). (c) Deposition and patterning of polysihcon gate formation of -source and drain (steps 7,8). (d) Deposition of thick Si02 blanket layer etch to form contact windows down to source, drain, and gate (step 9). (e) Metallisation of contact windows with W blanket deposition of Al patterning of metal (steps 10,11). The deposition of intermetal dielectric or final... Fig. 9. Fabrication sequence for an oxide-isolated -weU CMOS process, where is boron and X is arsenic. See text, (a) Formation of blanket pod oxide and Si N layer resist patterning (mask 1) ion implantation of channel stoppers (chanstop) (steps 1—3). (b) Growth of isolation field oxide removal of resist, Si N, and pod oxide growth of thin (<200 nm) Si02 gate oxide layer (steps 4—6). (c) Deposition and patterning of polysihcon gate formation of -source and drain (steps 7,8). (d) Deposition of thick Si02 blanket layer etch to form contact windows down to source, drain, and gate (step 9). (e) Metallisation of contact windows with W blanket deposition of Al patterning of metal (steps 10,11). The deposition of intermetal dielectric or final...
Antimicrobial agents are used where there is a need to inhibit bacterial and fungal growth. The additives can consist of copper, germanium, zinc and zinc compounds, metal oxides or sulfides, metal zeofltes, as well as silver and copper oxide-coated inorganic core particles (154—159) (see Industrial ANTIMICROBIAL AGENTS). [Pg.257]

Metal/environment interface—V ne cs of metal oxidation and dissolution, kinetics of reduction of species in solution nature and location of corrosion products him growth and him dissolution, etc. [Pg.7]

When a solid metal is attacked by oxygen gas, the product of the reaction is the metal oxide which, if it is not volatile, builds up as a surface layer on the metal. The oxide layer may be protective or non-protective. A non-protective layer does not inhibit the continued access of oxygen to the unchanged metal the rate of growth of such an oxide layer is independent of its thickness X and the law of growth is AX/At =. On integration this gives the linear law... [Pg.254]

Balog, M., Schieber, M., Patai, S., andMichman, M., Thin Films of Metal Oxides on Silicon by Chemical Vapor Deposition with Organometallic Compounds, J. of Crystal Growth, 17 298-301 (1972)... [Pg.106]

Salt-inclusion solids described herein were synthesized at high temperature (>500°C) in the presence of reactive alkali and alkaline-earth metal halide salt media. For single crystal growth, an extra amount of molten salt is used, typically 3 5 times by weight of oxides. The reaction mixtures were placed in a carbon-coated silica ampoule, which was then sealed under vacuum. The reaction temperature was typically set at 100-150 °C above the melting point of employed salt. As shown in the schematic drawing in Fig. 16.2, the corresponding metal oxides were first dissolved conceivably via decomposition because of cor-... [Pg.241]

Over the last few years, we have made a number of novel discoveries using reactive salt fluxes in the crystal growth experiment of mixed-metal oxides. The most important outcome that these salt-inclusion solids have demonstrated is the propensity for structure- directing effects of the employed salt. These hybrid solids have revealed fascinating solid-state structures ranging from nanoclusters to three-dimensional open frameworks of current interest. Solids featuring mag-... [Pg.248]


See other pages where Metal Oxidation Growth is mentioned: [Pg.112]    [Pg.373]    [Pg.111]    [Pg.300]    [Pg.301]    [Pg.303]    [Pg.305]    [Pg.307]    [Pg.309]    [Pg.112]    [Pg.373]    [Pg.111]    [Pg.300]    [Pg.301]    [Pg.303]    [Pg.305]    [Pg.307]    [Pg.309]    [Pg.1945]    [Pg.2726]    [Pg.56]    [Pg.329]    [Pg.105]    [Pg.163]    [Pg.233]    [Pg.14]    [Pg.957]    [Pg.989]    [Pg.57]    [Pg.254]    [Pg.287]    [Pg.287]    [Pg.991]    [Pg.995]    [Pg.1051]    [Pg.340]    [Pg.295]    [Pg.296]    [Pg.135]    [Pg.97]    [Pg.63]    [Pg.507]    [Pg.43]    [Pg.373]   


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Oxide growth

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