Lattice penetration

The other principal controls on heavy metal availability proposed previously are the layer silicates, organic matter, and carbonates. Where the controls for a given process are not understood, numerous hypotheses are to be expected. The previous explanations of heavy metal sorption by the layer silicates include surface sorption, surface complex ion formation, lattice penetration, and ion exchange. The mechanisms of heavy... 

Clay mineral Chemisorption Chemisorption at edges Complex adsorption Lattice penetration ... 

Chaimelling phenomena were studied before Rutherford backscattering was developed as a routine analytical tool. Chaimelling phenomena are also important in ion implantation, where the incident ions can be steered along the lattice planes and rows. Channelling leads to a deep penetration of the incident ions to deptlis below that found in the nonnal, near Gaussian, depth distributions characterized by non-chaimelled energetic ions. Even today, implanted chaimelled... 

Because the electrons do not penetrate into the crystal bulk far enough to experience its three-dimensional periodicity, the diffraction pattern is determined by the two-dimensional surface periodicity described by the lattice vectors ai and ai, which are parallel to the surface plane. A general lattice point within the surface is an integer multiple of these lattice vectors ... 

On the other hand, pit initiation which is the necessary precursor to propagation, is less well understood but is probably far more dependent on metallurgical structure. A detailed discussion of pit initiation is beyond the scope of this section. The two most widely accepted models are, however, as follows. Heine, etal. suggest that pit initiation on aluminium alloys occurs when chloride ions penetrate the passive oxide film by diffusion via lattice defects. McBee and Kruger indicate that this mechanism may also be applicable to pit initiation on iron. On the other hand, Evans has suggested that a pit initiates at a point on the surface where the rate of metal dissolution is momentarily high, with the result that more aggressive anions... 

For such a condition of equilibrium to be reached, the atoms must acquire sufficient energy to permit their displacement at an appreciable rate. In the case of metal lattices, this energy can be provided by a suitable rise in temperature. In the application of coatings the diffusion process is arrested at a suitable stage when there is a considerable solute concentration gradient between the surface and the required depth of penetration. 

In metals, the distance between the individual atoms in the lattice is of the order of 0-4 nm and only atoms of very small size are able to penetrate interstitially. This takes place, for instance, in the diffusion of hydrogen into iron, and of carbon into austenite, etc. This type of interstitial diffusion is usually rapid, since the inward movement of the solute atoms is relatively unhampered. 

During electrochemical reduction (charge) of the carbon host, lithium cations from the electrolyte penetrate into the carbon and form a lithiated carbon Li rCn. The corresponding negative charges are accepted by the carbon host lattice. As for any other electrochemical insertion process, the prerequisite for the formation of lithiated carbons is a host material that exhibits mixed (electronic and ionic) conductance. 

Moreover, a specially active hydrogen species present in a reaction mixture (e.g. atomic hydrogen, protons) (83) or forming during the surface reaction (37) can penetrate into a metal catalyst lattice and become... 

By using the liquid lattice approach to treat the random mixing of a disoriented polymer and a solvent, the so-called Flory-Huggins theory is often used to correlate the penetrant activity and the composition of the solution ... 

Boron implant with laser anneal. Boron atoms are accelerated into the backside of the CCD, replacing about 1 of 10,000 silicon atoms with a boron atom. The boron atoms create a net negative charge that push photoelectrons to the front surface. However, the boron implant creates defects in the lattice structure, so a laser is used to melt a thin layer (100 nm) of the silicon. As the silicon resolidihes, the crystal structure returns with some boron atoms in place of silicon atoms. This works well, except for blue/UV photons whose penetration depth is shorter than the depth of the boron implant. Variations in implant depth cause spatial QE variations, which can be seen in narrow bandpass, blue/UV, flat fields. This process is used by E2V, MIT/LL and Samoff. 

The calculations reveal one striking difference between Cu and Ag it is found that it requires only 4 kcal/mole for the Cu atoms to move into the plane of the surface Si atoms whereas for Ag this geometry is 53 kcal/mole higher than the ground state - even when the nearest Si atoms are allowed to move away from the noble metal atom. Thus, Cu is seen to penetrate fairly easily into the Si lattice whereas Ag stays above the surface. These theoretical findings are substantiated by thermal desorption and Auger spectroscopy measurements (48) showing that at elevated temperatures Ag desorbs into the gas phase whereas Cu remains in the solid phase. 

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