Indium vapor pressure

Halides. Indium trichloride [10025-83-8] InCl, can be made by heating indium in excess chlorine or by chlorinating lower chlorides. It is a white crystalline soHd, deUquescent, soluble in water, and has a high vapor pressure. InCl forms chloroindates, double salts with chlorides of alkaLi metals, and organic bases. 

Trimethylindium is a glassy-white crystalline solid due to its unique tet-rameric nature. In the vapor phase it is monomeric, and has the highest vapor pressure of all the indium alkyls mp 88°C, bp 135°C. It ignites spontaneously in air (pyrophoric) and decomposes violently in water. It can be stored... 

The metals zinc and cadmium should be avoided because of their high vapor pressures. Metals that include zinc and cadmium alloys such as brass (copper and zinc) and some silver solders (cadmium) should also be avoided for the same reasons. It is possible to obtain cadmium-free silver solder and brazing materials that use tin, lead, and indium for vacuum use. Some steel screws are cadmium-coated and also must be avoided. 

BAR/P1A] Bardi, G., Piacente, V., Scardala, P., Vaporization enthalpy of indium sesquiselenide from its vapor pressure. High Temp. Sci., 25, (1988), 175-185. Cited on page 244, 568. 

Boiling point (decomposes), 322 Melting point, °C 236 Relative density (waters 1) 6.1 Vapor pressure, mm Hg at 136.5 C 0.99 Solubilityinwater,g/100mlat25°C 0.6 Relative molecular mass 360.4 Grossformula Br2Hg WHITE CRYSTALS OR WHITE POWDER Reacts with sodium or potassium to form shock-sensitive mixtures. Decomposes when heated and when exposed to light, giving off toxic vapors (- bromine). Reacts violently with indium at 350°C. The solution in water is corrosive. ... 

Silicon, diamond, and metal deposition are all examples of elemental deposition. Compounds, particularly oxides, are also deposited by chemical vapor deposition. Some of the important oxides deposited as thin films include SiC>2, BaTiC>3, LiNbC>3, YBa2Cu30,. indium-doped SnC>2, and LiCoC>2. These materials have properties such as superconductivity or lithium ionic conductivity that make their production as thin films a much-studied area of research. If the oxide is to be deposited on the bare metal (e.g., depositing SiC>2 onto Si), chemical vapor deposition is not really needed. Controlling the oxygen partial pressure and temperature of the substrate will produce the oxide film Whether the film sticks to the substrate is another question The production of SiC>2 films on Si is an advanced technology that the integrated-circuit industry has relied on for many years. Oxide films on metals have been used to produce beautiful colored coatings as a result of interference effects (Eerden et al., 2005). 

Magnesium reacts with cyclopentadiene vapor very readily at 500° C and gives magnesium dicyclopentadienide in excellent yield 20). This is the preferred method for the preparation of this compound. Other elements which react directly with cyclopentadiene are indium, at 460°-580° C and 3-4 atm pressure, and thallium, at 440°-470° C and 2-3 atm pressure 21),... 

In a study by Kong et al. [7], single-crystal nanorings of ZnO were grown by the solid-vapor process. The raw material was a mixture ofZnO, indium oxide, and lithium carbonate powders at a weight ratio of 20 1 1, and it was placed in the highest temperature (1400 °C) zone available in a horizontal tube furnace. At such a high temperature and low pressures ( 10 Torr), ZnO decomposes into Zn + and O. ... 

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