Indium thermal properties

Thermal Properties. The glass transition temperature (Tg) and the decomposition temperature (Td) were measured with a DuPont 910 Differential Scanning Calorimeter (DSC) calibrated with indium. The standard heating rate for all polymers was 10 °C/min. Thermogravimetric analysis (TGA) was performed on a DuPont 951 Thermogravimetric Analyzer at a heating rate of 20 °C/min. 

The thermal properties of benzoic acid were evaluated using simultaneous differential thermal analysis (DTA) and thermogravimetric analysis (TGA). This work was performed on a Shimadzu DT-30 Thermal Analyzer system, which was calibrated using indium standard. Using a heating rate of 10°C/min, the thermograms presented in Figure 3 were obtained. 

In the absence of good quality single crystal samples, the physical properties of indium nitride have been measured on non-ideal thin films, typically ordered polycrystalline material with crystallites in the 50 nm to 500 nm range. Structural, mechanical and thermal properties have only been reported for epitaxial films on non-lattice-matched substrates. 

Testing procedure. Testing of thermal properties is a fairly standard procedure which is not discussed here. DSC was used for the studies on the effect of cooling rate on formation of spherulites in the presence of fillers. In order to assure the repeatability of conditions of the experiment, the instrument was calibrated with indium and tin standards. The TGA/DSC instrument was coupled with a mass... 

Properties. Table 1 hsts many of the physical, thermal, mechanical, and electrical properties of indium. The highly plastic nature of indium, which is its most notable feature, results from deformation from mechanical twinning. Indium retains this plasticity at cryogenic temperatures. Indium does not work-harden, can endure considerable deformation through compression, cold-welds easily, and has a distinctive cry on bending as does tin. 

Solders. In spite of the wide use and development of solders for millennia, as of the mid-1990s most principal solders are lead- or tin-based alloys to which a small amount of silver, zinc, antimony, bismuth, and indium or a combination thereof are added. The principal criterion for choosing a certain solder is its melting characteristics, ie, soHdus and Hquidus temperatures and the temperature spread or pasty range between them. Other criteria are mechanical properties such as strength and creep resistance, physical properties such as electrical and thermal conductivity, and corrosion resistance. 

The hybrid circuit 10 comprises a buffer structure 16 which is comprised of a material which accommodates the difference in thermal expansion coefficients of the HgCdTe detector array 12 and the silicon read-out chip 14. The buffer layer is made of sapphire which also has good thermal conductivity properties. The buffer structure has laser drilled vias 18 which are formed in registration with unit cells of the detector array and the read-out circuit. Each of the vias is provided with indium bumps 20 at opposing ends thereof. The buffer structure is interposed between the detector array and the read-out chip. Cold weld indium bump technology is employed to couple the bumps 20 to the buffer structure. The buffer structure is further... 

TABLE 4 Thermal and thermodynamic properties of indium nitride. 

A good reference material has a number of desirable properties including a well-documented value, avmlability in a suitable form for analysis, homogeneity, stability, low toxicity, and traceability to a national reference laboratory (NRL). In traditional DSC and TMA, metals like indium, tin, and zinc meet these criteria. These metals are not suitable for temperature calibration for localised thermal analysis, however, as they may contaminate the probe tip thus changing its resistance and defeating the object of calibration.. 

For the development of cheap solar cells, layers of a heavily doped semicon-dnctor like ITO, which may act as a barrier-forming semiconductor, a wide band gap window, and an antireflection coating in the heterostructure [1, 24], attract particular interest. It was shown [25] that the application of vacuumless technologies such as pyrolysis in air for the production of the above-mentioned layers can substantially influence the properties of interfacial layers. The IR spectra of 10283-SiOj -Si heterostructures in solar cells were studied. The 10383 films were produced by thermal decomposition of a complex of the general form L3ln (where L is a ligand). Thermal decomposition of this compound on a heated Si substrate (T = 230-270°C) produces a film of indium sulfide with good adhesion... 

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