Indium nitrides

Mono-, di-, and trivalent bromides and iodides may be made by methods similar to the chlorides. The lower valence salts also disproportionate in water. Indium trifluoride [7783-52-0] InF., is sparingly soluble in water. It forms an ammonium double salt, SNH F TnF. [15273-84-4] which decomposes on heating to indium nitride [25617-98-5] InN. 

T. Lindgren, Photo Induced Oxidation of Water at Thin Film Electrodes A study of Tungsten Oxide, Herruitite, Indium Nitride and Tin Nitride, in Department of Physical Chemistry. 2001, Uppsala... 

Results from XRD or electron diffraction of UFPs of 11 elements are listed in Table 8.1.4. Ten kinds of nitride UFPs except for indium nitride can be synthesized by this method (30-32). Most nitride UFPs do not show a clear crystal habit, which is due to a fairly small particle size of 5 nm at most. Only TiN UFPs formed in N2 gas show a cubic crystal habit, as shown in Figure 8.1.5. 

The reason indium nitride UFPs cannot grow by this method is probably the low decomposition temperature (620°C) of InN. The similar consideration can be done on tungsten nitride and molybdenum nitride. The phases of W2N and Mo2N are recognized in UFPs, but no WN and MoN phases are detected their decomposition temperature is about 80()°C. 

Light-emitting diodes -arsenic m [ARSENIC AND ARSENIC ALLOYS] (Vol 3) -gallium and indium nitrides in [NITRIDES] (Vol 17) -germaniumm [GERMANIUM AND GERMANIUMCOMPOUNDS] (Vol 12) -phosphorus compounds m [PHOSPHORUS COMPOUNDS] (Vol 18) -use m biosensors [BIOSENSORS] (Vol 4)... 

From the results presented in this Datareview, the quality of the crystals is clearly one of the main problems for the precise determination of the physical properties of the group III nitrides. This is especially true for indium nitride, where no elastic moduli could be measured, due to the lack of single crystals. The differences between the elastic moduli measured with the same technique (Brillouin scattering) in GaN is further proof that the quality and the nature (bulk single crystals or epitaxial layer) of the samples is of primary importance. 

In the absence of good quality single crystal samples, the physical properties of indium nitride have been measured on non-ideal thin films, typically ordered polycrystalline material with crystallites in the 50 nm to 500 nm range. Structural, mechanical and thermal properties have only been reported for epitaxial films on non-lattice-matched substrates. 

Basic data on the physical properties of indium nitride are sparse and the following sections include instances of values uncorroborated by repeated measurement. In cases where data are absent, the chemical trends across the nitride group have made it possible for first-order estimates to be made and these are included where thought appropriate. The reader is invited to consider these extrapolations by consulting firmer values for AIN and GaN elsewhere in this volume more firmly established data await the advent of better quality material. 

A4.3 Basic physical properties of InN TABLE 1 Lattice parameters of indium nitride. 

Indium nitride has twelve phonon modes at the zone centre (symmetry group Cev), three acoustic and nine optical with the acoustic branches essentially zero at k = 0. The infrared active modes are Ei(LO), Ei(TO), Ai(LO) and Ai(TO). A transverse optical mode has been identified at 478 cm 1 (59.3 meV) by reflectance [6] and 460 cm 1 (57.1 meV) by transmission [24], In both reports the location of a longitudinal optical mode is inferred from the Brout sum rule, giving respective values of 694 cm 1 (86.1 meV) and 719 cm 1 (89.2 meV). Raman scattering of single crystalline wurtzite InN reveals Ai(LO) and E22 peaks at 596 cm 1 and at 495 cm 1 respectively [25],... 

TABLE 3 Coefficient of linear thermal expansion of indium nitride (x 1C6 K 1) [26],... 

TABLE 4 Thermal and thermodynamic properties of indium nitride. 

E REFRACTIVE INDEX AND DIELECTRIC PROPERTIES OF INDIUM NITRIDE... 

Indium nitride is a wide-gap semiconductor with negligible intrinsic carrier concentration and there are no reports of deliberate doping. Electron concentrations, most commonly of order 1020 cm 3, appear independent of growth method and are therefore assumed to be of native defect origin. The presence of... 

Aluminium, gallium and indium nitride belong to a family of materials described as peritectic compounds. A peritectic compound is defined as a compound that transforms, at the peritectic temperature and atmospheric pressure, according to the reaction ... 

The growth of gallium and indium nitride, oxide, sulfide, and selenide phases from metal-organic precursors has been intensively studied. An exhaustive listing of precursors is beyond the scope of the present article, but readers are directed toward several recent reviews that summarize progress. ... 

One of the main interests in indium amides has been their potential utility as single-source precursors for indium nitride materials. They also serve as starting materials in the synthesis of various other indium compounds. For instance, amides such as In(NEt2)3 and In[N(SiMe3)t-Bu]3 react with alcohols or thiols to produce indium(III) alkoxides or thiolates, respectively. 

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