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Indium compounds thermal properties

For the development of cheap solar cells, layers of a heavily doped semicon-dnctor like ITO, which may act as a barrier-forming semiconductor, a wide band gap window, and an antireflection coating in the heterostructure [1, 24], attract particular interest. It was shown [25] that the application of vacuumless technologies such as pyrolysis in air for the production of the above-mentioned layers can substantially influence the properties of interfacial layers. The IR spectra of 10283-SiOj -Si heterostructures in solar cells were studied. The 10383 films were produced by thermal decomposition of a complex of the general form L3ln (where L is a ligand). Thermal decomposition of this compound on a heated Si substrate (T = 230-270°C) produces a film of indium sulfide with good adhesion... [Pg.479]


See other pages where Indium compounds thermal properties is mentioned: [Pg.137]    [Pg.1976]    [Pg.382]    [Pg.1136]    [Pg.382]    [Pg.328]    [Pg.441]    [Pg.1079]    [Pg.516]    [Pg.98]   
See also in sourсe #XX -- [ Pg.638 ]

See also in sourсe #XX -- [ Pg.638 ]




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