Indium physical properties

Coordination Compounds. A large number of indium complexes with nitrogen ligands have been isolated, particularly where Ir is in the +3 oxidation state. Examples of ammine complexes include pr(NH3)3] " [24669-15-6], prCl(NH3)] " [29589-09-1], and / j -pr(03SCF3)2(en)2]" [90065-94-4], Compounds of A/-heterocychc ligands include trans- [xCX py)][ [24952-67-8], Pr(bipy)3] " [16788-86-6], and an unusual C-metalated bipyridine complex, Pr(bipy)2(C, N-bipy)] [87137-18-6]. Isolation of this latter complex produced some confusion regarding the chemical and physical properties of Pr(bipy)3]3+ (167). 

Solders. In spite of the wide use and development of solders for millennia, as of the mid-1990s most principal solders are lead- or tin-based alloys to which a small amount of silver, zinc, antimony, bismuth, and indium or a combination thereof are added. The principal criterion for choosing a certain solder is its melting characteristics, ie, soHdus and Hquidus temperatures and the temperature spread or pasty range between them. Other criteria are mechanical properties such as strength and creep resistance, physical properties such as electrical and thermal conductivity, and corrosion resistance. 

Extensive structural, optical, and electronic studies on the chalcopyrite semiconductors have been stimulated by the promising photovoltaic and photoelectrochem-ical properties of the copper-indium diselenide, CuInSe2, having a direct gap of about 1.0 eV, viz. close to optimal for terrestrial photovoltaics, and a high absorption coefficient which exceeds 10 cm . The physical properties of this and the other compounds of the family can be modulated to some extent by a slight deviation from stoichiometry. Thus, both anion and cation deficiencies may be tolerated, inducing, respectively, n- and p-type conductivities a p-type behavior would associate to either selenium excess or copper deficiency. 

Ununtrium is located on the periodic chart in group 13 (IIIA) just below thallium and indium. It is expected to have chemical and physical properties similar to these two homo-logues. Since only one or two unstable atoms of the isotopes of ununtrium have been synthesized, its melting point, boiling point, and density are not known. 

Other important physical properties of indium arc given under Chemical Elements. 

From the results presented in this Datareview, the quality of the crystals is clearly one of the main problems for the precise determination of the physical properties of the group III nitrides. This is especially true for indium nitride, where no elastic moduli could be measured, due to the lack of single crystals. The differences between the elastic moduli measured with the same technique (Brillouin scattering) in GaN is further proof that the quality and the nature (bulk single crystals or epitaxial layer) of the samples is of primary importance. 

In the absence of good quality single crystal samples, the physical properties of indium nitride have been measured on non-ideal thin films, typically ordered polycrystalline material with crystallites in the 50 nm to 500 nm range. Structural, mechanical and thermal properties have only been reported for epitaxial films on non-lattice-matched substrates. 

Basic data on the physical properties of indium nitride are sparse and the following sections include instances of values uncorroborated by repeated measurement. In cases where data are absent, the chemical trends across the nitride group have made it possible for first-order estimates to be made and these are included where thought appropriate. The reader is invited to consider these extrapolations by consulting firmer values for AIN and GaN elsewhere in this volume more firmly established data await the advent of better quality material. 

A4.3 Basic physical properties of InN TABLE 1 Lattice parameters of indium nitride. 

There are several different metal oxides with optical band gaps of 2.5 to 4 eV, which are useful for transparent conducting oxide (TCO) coatings. The most common of these are tin-doped indium oxide (ITO), fluorine or antimony-doped tin oxide and doped zinc oxides. The preparation and physical properties of these materials prepared by CVD will be discussed. 

The kinetics of the deposition of In20i films have not been investigated by many groups, since most of them concentrate on the physical properties and possible applications. The published results are listed in Table 3-8. In addition, there are only two remarks about decomposition pathways. Maruyama andTabata [111] state that indium acetate needs no oxygen as reactant to form indium oxide, i.e., some of the metal-oxygen bonds are not broken during the deposition. Also, as proposed by Nomura and coworkers [122], the butylindium thiolate decomposes via formation of indium sulfides ... 

Indium(III)-selenide exhibits a complex hexagonal structure making it possible for ions to diffuse in and alter the physical properties without substantially altering the host structure [139]. Thus, the compound can be employed as a cathode in microbatteries and as a solid solution electrode in microcapacitors.[139] Indium selenide, IniSe.i, is also a promising candidate for solar energy conversion [139]. The compound can be prepared by the CVD of In(SePh)3 at 550°C [138]. 

At this time the Periodic Classification had not been formulated and it was difficult to decide to which group of elements thallium should be assigned. The metal resembles lead in many of its physical properties and a number of thallous compounds likewise resembled those of lead. Other thallous salts were found to be isomorphous with those of potassium and the spectrum of thallium was simple like the spectra of the alkali metals. To add to the uncertainty, thallic compounds resembled those of aluminium. For these reasons Dumas referred to thallium as the paradoxical metal and the ornithorynchus of the metals . MendeMeff, with characteristic courage, classed thallium with the aluminium metals in his Periodic Table in 1869, and subsequent research has fully justified this arrangement. With an atomic number 81 it lies between mercury (80) and lead (82) and whilst in the monovalent state it shows analogy with the alkali metals, in the trivalent state it is a true congener of indium. 

Some of the physical properties of the halides of lower-valent indium are listed in Table I. 

Indium sulfide (In2S3) is an important material for PV applications [239, 240]. Due to its band value (2-2.8eV), it can replace Cd8 in CIG8-based solar cells to avoid toxic Cd and realize more environmentally friendly PV technology. Results for the development of Cd-free buffer layers for CIG8 thin-film solar cells from different laboratories have shown that 383, with optimal physical properties, can meet the requirements for use as window material or buffer layer for these PV structures [248],... 

The opening chapter of the Handbook reviews synthesis conditions, isothermal sections of phase diagrams, crystallography and basic physical properties of ternary intermetallic com-poimds consishng of rare-earth metals, transition metals and indium. Some of these intermetallic compoimds - indides (so named because indiinn is usually the most electronegative... 

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